Littelfuse, Inc. 300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs IXGT32N90B2

Description
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
  • 300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs - IXGT32N90B2 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
Datasheet
Datasheet Summary
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The IXGT32N90B2 is a high-speed IGBT designed for switching applications in PFC circuits, UPS, switched-mode power supplies, AC motor control, and DC drives. It is packaged in a TO-268 case with a maximum collector-emitter voltage of 900 V, continuous collector current of 32 A at 110°C, and peak pulse current of 200 A. The device has a collector-emitter saturation voltage of 2.7 V at 32 A and 25°C, and a short-circuit withstand time of 150 ns. Thermal resistance from junction to case is 0.42 K/W. It features fast switching speeds with turn-off delay time of up to 400 ns and fall time of 150 ns, suitable for high-frequency operation. The IGBT meets standard mounting torque specifications and is rated for operating and storage junction temperatures from -55°C to 150°C.

Datasheet Summary
Powered by GS/AI

The IXGT32N90B2 is a high-speed IGBT designed for switching applications in PFC circuits, UPS, switched-mode power supplies, AC motor control, and DC drives. It is packaged in a TO-268 case with a maximum collector-emitter voltage of 900 V, continuous collector current of 32 A at 110°C, and peak pulse current of 200 A. The device has a collector-emitter saturation voltage of 2.7 V at 32 A and 25°C, and a short-circuit withstand time of 150 ns. Thermal resistance from junction to case is 0.42 K/W. It features fast switching speeds with turn-off delay time of up to 400 ns and fall time of 150 ns, suitable for high-frequency operation. The IGBT meets standard mounting torque specifications and is rated for operating and storage junction temperatures from -55°C to 150°C.

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300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs - IXGT32N90B2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs
IXGT32N90B2
300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs IXGT32N90B2
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT

GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGT32N90B2
Product Name 300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs
VCES 900 volts
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