Infineon Technologies AG Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| -150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - A IRF5NJ6215 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRF5NJ6215 A... | |
| -150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TX Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRF5NJ6215 A IRF5NJ6215 with... | |
| -150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TXV Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRF5NJ6215 A IRF5NJ6215 with... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF240 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line | |
| 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF340 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF450 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| -100V Single P-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon... | |
| -100V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| -12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dual P-Channel MOSFET Applications Fuel-cell control unit (FCCU) Designers who used this product also designed... | |
| -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| -55V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| -55V Single P-Channel Power MOSFET in a TO-262 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| 100V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ SJ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 Package Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt... | |
| 150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package The IRF150DM115 is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design... | |
| 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| 150V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 Package Summary of Features Very low RDS(on) Excellent gate charge x RDS(on) (FOM) Optimized Qrr 175°C operating temperature... | |
| 200 V Single N-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| 200V Single N-Channel MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| 200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 30V Single N-Channel StrongIRFET™ Power MOSFET and Schottky Diode in a DirectFET™ MT package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The... | |
| 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | |
| 40V Single N-Channel Power MOSFET in a TO-220 package Summary of Features Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Industry standard through-hole power package... | |
| 40V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MT package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| 50V Dual N-Channel IR MOSFET™ in a SO-8 package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon... | |
| 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dynamic dv/dt Rating Fast Switching Dual N and P-Channel MOSFET Applications 1-phase... | |
| 55V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 60 V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ ME package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are... | |
| 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7... | |
| 600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in TOLL (PG-HSOF-8) for an increased junction temperature sensing accuracy The CoolMOS™ S7T with embedded temperature sensor increases junction temperature... | |
| 600V CoolMOS™ CFD7 Superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies Infineon’s CoolMOS™ CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V... | |
| 60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Applications Home appliances Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Normal level :... | |
| 60V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 60V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MX package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 650 V CoolMOS™ 8 power transistor The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It... | |
| 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant... | |
| 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R029CFD7 in TO-247 4-pin package is ideally suited for resonant... | |
| 80V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-247 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-247 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-247 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R310PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance,... | |
| A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7... | |
| A new SMD package using Kelvin source concept The CoolMOS™ C7 Gold superjunction MOSFET series (G7) for the first time brings together the benefits of the improved 650V CoolMOS™ C7... | |
| Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100KHz Industry standard surface-mount... | |
| CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss... | |
| Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more... | |
| Designers who used this product also designed with BSC093N15NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSS127 | Small signal/small power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G... | |
| For new design activities find out more on IPTC014N10NM5! OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC015N10NM5 is part of OptiMOS™ 5 power MOSFET in TOLT: the... | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7... | |
| Infineon’s answer to resonant high-power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes... | |
| Infineon’s best price performance 600V CoolMOS™ S7 Superjunction MOSFET for low frequency switching applications in TO-Leadless (TOLL) package Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R040S7) in TO-Leadless (Pb-free) package features... | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| IPT60R037CM8 – 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| IPT60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPTA60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPTC034N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to... | |
| IPW60R016CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPW60R037CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPZA60R016CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPZA60R037CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IR MOSFET -20V in a SO-8 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such... | |
| IR MOSFET -40 V in a SO-8 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| IR MOSFET -55 V in a D²PAK package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| IR MOSFET 100 V in a D²PAK package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| IR MOSFET 55 V in a D²PAK package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need... | |
| OptiMOS™ 25V low-voltage power MOSFET in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on). The innovative Source-Down OptiMOS™ low-voltage power MOSFET 25V (IQE006NE2LM5) comes in a PQFN3.3x3.3 package... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package The IQE220N15NM5CG is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down DSC package The IQE220N15NM5SC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package The IQE220N15NM5 is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology... | |
| OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG039N15NM5 comes in the improved TO-Leaded package with gullwing leads. | |
| OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG044N15NM5 comes in the improved TO-Leaded package with gullwing leads. | |
| OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG054N15NM5 comes in the improved TO-Leaded package with gullwing leads. | |
| OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG063N15NM5 comes in the improved TO-Leaded package with gullwing leads. | |
| OptiMOS™ 5 power MOSFET 150 V in TOLT for excellent thermal performance IPTC039N15NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for... | |
| OptiMOS™ 5 power MOSFET 150 V in TOLT for excellent thermal performance IPTC044N15NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for... | |
| OptiMOS™ 5 power MOSFET 150 V in TOLT for excellent thermal performance IPTC054N15NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for... | |
| OptiMOS™ 5 power MOSFET 150 V in TOLT for excellent thermal performance IPTC063N15NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for... | |
| OptiMOS™ 5 power MOSFET 60 V in TOLT for excellent thermal performance IPTC012N06NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down DSC package IQE022N06LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3... | |
| OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package IQE022N06LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package IQE046N08LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package IQE046N08LM5CG is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET logic level in a PQFN 3.3x3.3 Source-Down... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down DSC package IQE046N08LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3... | |
| OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package IQE046N08LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down... | |
| OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG007N06NM5 comes in the improved TO-Leaded package with gullwing leads. With a... | |
| OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a... | |
| OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a... | |
| OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG018N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a... | |
| OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG025N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a... | |
| OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG025N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a... | |
| OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC011N08NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for superior thermal... | |
| OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC014N08NM5 is part of OptiMOS™ 5 power MOSFET in TOLT: the TO-Leaded top side-cooling package for superior thermal performance. This... | |
| OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC014N10NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for superior thermal... | |
| OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC019N10NM5 is part of OptiMOS™ 5 power MOSFET in TOLT: the TO-Leaded top side-cooling package for superior thermal performance. This... | |
| OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.7 mΩ, 351 A in TOLT package IPTC017N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the TO-Leaded... | |
| OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with benchmark RDS(on) in the industry This 40 V normal-level power MOSFET comes in our latest... | |
| OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on) This 40 V normal-level power MOSFET comes in our latest innovative, compact clip-based... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLG OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLT OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in TOLG package for higher thermal cycling on board performance IPTG025N15NM6 OptiMOS™ 6 150 V in normal level is setting a new... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in TOLT package for top-side cooling IPTC025N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in TOLT package IPTC068N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in TOLG package This is a normal level 120 V MOSFET in TOLG packaging with 1.7 mOhm on-resistance. IPTG017N12NM6 is part of... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in TOLT package This is a normal level 120 V MOSFET in TO-Leaded top-side cooling (TOLT) packaging with 1.7 mOhm on-resistance. IPTC017N12NM6... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in TOLT package This is a normal level 120 V MOSFET in TOLT packaging with 2.6 mOhm on-resistance. IPTC026N12NM6 is part of... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate with dual-side cooling IQE004NE1LM7CGSC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate IQE004NE1LM7CG is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down with dual-side cooling IQE004NE1LM7SC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to... | |
| OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The IQE065N10NM5 is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package The IQE008N03LM5CGSC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology... | |
| OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The IQE008N03LM5CG is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance The IQE008N03LM5 is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on) The IQE013N04LM6CG extends the innovative Source-Down family with the 1.35mOhm, OptiMOS™ power MOSFET 40V in... | |
| OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3... | |
| OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance. The IQE030N06NM5CG is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio... | |
| OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance The IQE050N08NM5 is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance The IQE050N08NM5CG is Infineon’s extension of the innovative Source-Down technology. | |
| OptiMOS™ power MOSFETs 150 V in PQFN 5x6 mm2 Source-Down package with industry-leading RDS(on) . The power MOSFET IQD063N15NM5CG 150 V comes in a PQFN 5x6 mm2... | |
| OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD063N15NM5CGSC comes with a low RDS(on) of 6,32 mOhm combined... | |
| OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD063N15NM5SC comes with a low RDS(on) of 6,32 mOhm combined... | |
| OptiMOS™ power MOSFETs 25 V in PQFN 5x6 mm 2 Source-Down package with industry leading RDS(on) . The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm... | |
| OptiMOS™ power MOSFETs 30 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) . The power MOSFET IQDH35N03LM5CG 30 V comes in a PQFN 5x6 mm... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on) The power MOSFET IQD005N04NM6CG 40 V normal-level comes in a PQFN 5x6 mm... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on) The power MOSFET IQDH45N04LM6CG 40 V comes in a PQFN 5x6 mm2... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQDH45N04LM6CGSC comes with a low RDS(on) of 0,45 mOhm... | |
| OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQDH45N04LM6SC comes with a low RDS(on) of 0,45 mOhm... | |
| OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on). The power MOSFET IQDH45N04LM6 comes in a PQFN 5x6 Source-Down package. The... | |
| OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQD005N04NM6CGSC comes with a low RDS(on) of... | |
| OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQD005N04NM6SC comes with a low RDS(on) of... | |
| OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down package with very low RDS(on). The power MOSFET IQD005N04NM6 comes in a PQFN 5x6 Source-Down package. The... | |
| Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2... | |
| Source-Down Products with industry leading RDS(on) and superior thermal performance The IQE030N06NM5 is Infineon’s extension of the innovative Source-Down technology. The OptiMOSTM 5 60 V PQFN 3.3x3.3 Source-Down... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R040CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R060CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R080CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R099CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R125CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R155CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R190CFD7 in... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R018CFD7... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R029CFD7... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R041CFD7... | |
| The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses... |
| << Prev | Next >> |