Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF6785 IRF6785

Description
200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard High-current rating Dual-side cooling capability Low package height of 0.7mm Low parasitic (1-2 nH) inductance package 100% lead-free (No RoHS exemption) Benefits Wide availability from distribution partners Industry standard qualification level High current carrying capability Optimum thermal performance Compact form factor High efficiency Environmentally friendly Potential Applications SMPS UPS Solar power inverter DC motor drives Battery powered applications Applications Smart buildings Designers who used this product also designed with IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF6785 - IRF6785 - Infineon Technologies AG
    Infineon Technologies AG
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Description
200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard High-current rating Dual-side cooling capability Low package height of 0.7mm Low parasitic (1-2 nH) inductance package 100% lead-free (No RoHS exemption) Benefits Wide availability from distribution partners Industry standard qualification level High current carrying capability Optimum thermal performance Compact form factor High efficiency Environmentally friendly Potential Applications SMPS UPS Solar power inverter DC motor drives Battery powered applications Applications Smart buildings Designers who used this product also designed with IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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Datasheet
Datasheet Summary
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The IRF6785MTRPbF is a 200 V N-channel MOSFET designed for Class-D audio amplifier applications, utilizing DirectFET packaging for low parasitic inductance and dual-sided cooling. It features a typical R DS(on) of 85 mΩ at 10 V gate drive, a gate charge of 26 nC, and a maximum continuous drain current of 19 A at 25⁰C case temperature. The device is qualified for operation from -40⁰C to 150⁰C junction temperature and meets RoHS standards. Its DirectFET MZ package has dimensions of 6.35 mm × 5.05 mm × 0.72 mm and supports vapor phase, infrared, or convection soldering. It is rated for single-pulse avalanche energy up to 33 mJ and is RoHS compliant with lead-free termination.

Datasheet Summary
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The IRF6785MTRPbF is a 200 V N-channel MOSFET designed for Class-D audio amplifier applications, utilizing DirectFET packaging for low parasitic inductance and dual-sided cooling. It features a typical R DS(on) of 85 mΩ at 10 V gate drive, a gate charge of 26 nC, and a maximum continuous drain current of 19 A at 25⁰C case temperature. The device is qualified for operation from -40⁰C to 150⁰C junction temperature and meets RoHS standards. Its DirectFET MZ package has dimensions of 6.35 mm × 5.05 mm × 0.72 mm and supports vapor phase, infrared, or convection soldering. It is rated for single-pulse avalanche energy up to 33 mJ and is RoHS compliant with lead-free termination.

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF6785 - IRF6785 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF6785
IRF6785
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF6785 IRF6785
200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard High-current rating Dual-side cooling capability Low package height of 0.7mm Low parasitic (1-2 nH) inductance package 100% lead-free (No RoHS exemption) Benefits Wide availability from distribution partners Industry standard qualification level High current carrying capability Optimum thermal performance Compact form factor High efficiency Environmentally friendly Potential Applications SMPS UPS Solar power inverter DC motor drives Battery powered applications Applications Smart buildings Designers who used this product also designed with IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET

200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.


Summary of Features

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • High-current rating
  • Dual-side cooling capability
  • Low package height of 0.7mm
  • Low parasitic (1-2 nH) inductance package
  • 100% lead-free (No RoHS exemption)

Benefits

  • Wide availability from distribution partners
  • Industry standard qualification level
  • High current carrying capability
  • Optimum thermal performance
  • Compact form factor
  • High efficiency
  • Environmentally friendly

Potential Applications

  • SMPS
  • UPS
  • Solar power inverter
  • DC motor drives
  • Battery powered applications

Applications

  • Smart buildings

Designers who used this product also designed with


  • IPP65R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC500N20NS3 G |
    N-Channel Power MOSFET
  • IRS2093MPBF |
    Discrete Class D Audio Amplifier ICs
  • IPA60R180C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP65R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC500N20NS3 G |
    N-Channel Power MOSFET
  • IRS2093MPBF |
    Discrete Class D Audio Amplifier ICs
  • IPA60R180C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP65R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC500N20NS3 G |
    N-Channel Power MOSFET
  • IRS2093MPBF |
    Discrete Class D Audio Amplifier ICs
  • IPA60R180C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF6785
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF6785
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1000 ohms
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