Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R125CFD7 IPT60R125CFD7

Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse-recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse-recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications Complete system solutions for smart TVs Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 1 2 3 4
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R125CFD7 - IPT60R125CFD7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse-recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse-recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications Complete system solutions for smart TVs Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 1 2 3 4
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Datasheet
Datasheet Summary
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The IPT60R125CFD7 is a 600V superjunction MOSFET with an integrated ultra-fast body diode, designed for resonant topologies such as phase-shift full-bridge and LLC circuits in server, telecom, and EV charging applications. It is packaged in a PG-HSOF-8 surface-mount case measuring 10.58 mm by 10.10 mm, with a maximum drain-source on-state resistance of 125 mΩ, a gate charge of 31 nC, and a pulsed drain current rating of 58 A. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.99 °C/W. It meets JEDEC standards for industrial applications and features best-in-class reverse recovery charge (0.38 μC) and diode commutation speed (1300 A/μs).

Datasheet Summary
Powered by GS/AI

The IPT60R125CFD7 is a 600V superjunction MOSFET with an integrated ultra-fast body diode, designed for resonant topologies such as phase-shift full-bridge and LLC circuits in server, telecom, and EV charging applications. It is packaged in a PG-HSOF-8 surface-mount case measuring 10.58 mm by 10.10 mm, with a maximum drain-source on-state resistance of 125 mΩ, a gate charge of 31 nC, and a pulsed drain current rating of 58 A. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.99 °C/W. It meets JEDEC standards for industrial applications and features best-in-class reverse recovery charge (0.38 μC) and diode commutation speed (1300 A/μs).

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R125CFD7 - IPT60R125CFD7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R125CFD7
IPT60R125CFD7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R125CFD7 IPT60R125CFD7
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse-recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse-recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications Complete system solutions for smart TVs Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 1 2 3 4

Infineon’s answer to resonant high power topologies

The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse-recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.


Summary of Features

  • Ultra-fast body diode
  • Best-in-class reverse-recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Potential Applications

Server, Telecom, EV-charging, SMPS, PC power


Applications

  • Complete system solutions for smart TVs

Designers who used this product also designed with


  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • BSC012N06NS |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 1ED3121MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • BSC012N06NS |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT60R125CFD7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R125CFD7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1250 ohms
QG 31 nC
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