Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPZA60R016CM8 IPZA60R016CM8

IPZA60R016CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications e.g.: server, telecom, EV charging, UPS Designers who used this product also designed with 1ED3123MC12H | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs IRS4427S | Gate driver ICs IMBG120R234M2H | Silicon Carbide MOSFET Discretes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDH08SG60C | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes IDW40G120C5B | CoolSiC™ Schottky Diodes 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs IRS4427S | Gate driver ICs IMBG120R234M2H | Silicon Carbide MOSFET Discretes IMZ120R030M1H | Silicon Carbide MOSFET Discretes IDH08SG60C | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes 1 2 3 4