Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPTC068N20NM6 IPTC068N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in TOLT package IPTC068N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. OptiMOS™ 6 200 V was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Highest power density can be achieved with the combination of the TOLT package and the OptiMOS™ 6 technology. Summary of Features Industries lowest RDS(on) in 200 V Industries lowest Qrr in 200 V Compared to previous 200 V technology Up to 42% lower RDS(on) Up to 89% lower Qrr(typ) 36% lower FOMg More than 3 times softer diode Improved capacitance linearity Improved SOA Tight Vgs(th) spread of +/- 750 mV High avalanche ruggedness Max Tj of 175°C and MSL1 Benefits Low conduction and switching losses Stable operation with improved EMI Better current sharing when paralleling Enhanced robustness Improved system reliability Applications Audio amplifier solutions Industrial and consumer BMS Motor Control Power conversion Renewables