Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF IRF1404ZSPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205290-IRF1404ZSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4340pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF - 205290-IRF1404ZSPBF - Win Source Electronics
    Win Source Electronics
  • IRF1404ZSPBF - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - IRF1404ZSPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRF1404ZSPBF-ND - DigiKey
    DigiKey
  • Triode/MOS Tube/Transistor >> MOSFETs - IRF1404ZSPBF - LCSC Electronics Technology (HK) Limited
    LCSC Electronics Technology (HK) Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF1404ZSPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 205290-IRF1404ZSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4340pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF - 205290-IRF1404ZSPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF
205290-IRF1404ZSPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF 205290-IRF1404ZSPBF
Manufacturer: Infineon Technologies Win Source Part Number: 205290-IRF1404ZSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4340pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205290-IRF1404ZSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4340pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- IRF1404ZSPBF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IRF1404ZSPBF
IRF1404ZSPBF
Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF1404ZSPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF1404ZSPBF
Single FETs, MOSFETs IRF1404ZSPBF
MOSFET N-CH 40V 180A D2PAK

MOSFET N-CH 40V 180A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF1404ZSPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF1404ZSPBF-ND
Single FETs, MOSFETs IRF1404ZSPBF-ND
N-Channel 40V 180A (Tc) 200W (Tc) Surface Mount D2PAK

N-Channel 40V 180A (Tc) 200W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Triode/MOS Tube/Transistor >> MOSFETs - IRF1404ZSPBF - LCSC Electronics Technology (HK) Limited
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF1404ZSPBF
Triode/MOS Tube/Transistor >> MOSFETs IRF1404ZSPBF
D2PAK MOSFETs ROHS

D2PAK MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF1404ZSPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF1404ZSPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF1404ZSPBF
MOSFET N-CH 40V 180A D2PAK

MOSFET N-CH 40V 180A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ODG (Origin Data Global) DigiKey LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205290-IRF1404ZSPBF IRF1404ZSPBF IRF1404ZSPBF IRF1404ZSPBF-ND IRF1404ZSPBF IRF1404ZSPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF Single FETs, MOSFETs Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts 40 volts
PD 200000 milliwatts 200000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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