Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF IRF1404ZSPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205290-IRF1404ZSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4340pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF - 205290-IRF1404ZSPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF1404ZSPBF-ND - DigiKey
    DigiKey
  • IRF1404ZSPBF - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - IRF1404ZSPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF1404ZSPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Triode/MOS Tube/Transistor >> MOSFETs - IRF1404ZSPBF - LCSC Electronics Technology (HK) Limited
    LCSC Electronics Technology (HK) Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 205290-IRF1404ZSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4340pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF - 205290-IRF1404ZSPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF
205290-IRF1404ZSPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF 205290-IRF1404ZSPBF
Manufacturer: Infineon Technologies Win Source Part Number: 205290-IRF1404ZSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4340pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205290-IRF1404ZSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4340pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF1404ZSPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF1404ZSPBF-ND
Single FETs, MOSFETs IRF1404ZSPBF-ND
N-Channel 40V 180A (Tc) 200W (Tc) Surface Mount D2PAK

N-Channel 40V 180A (Tc) 200W (Tc) Surface Mount D2PAK

Buy Now Datasheet
- IRF1404ZSPBF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IRF1404ZSPBF
IRF1404ZSPBF
Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF1404ZSPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF1404ZSPBF
Single FETs, MOSFETs IRF1404ZSPBF
MOSFET N-CH 40V 180A D2PAK

MOSFET N-CH 40V 180A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF1404ZSPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF1404ZSPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF1404ZSPBF
MOSFET N-CH 40V 180A D2PAK

MOSFET N-CH 40V 180A D2PAK

Supplier's Site
Triode/MOS Tube/Transistor >> MOSFETs - IRF1404ZSPBF - LCSC Electronics Technology (HK) Limited
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF1404ZSPBF
Triode/MOS Tube/Transistor >> MOSFETs IRF1404ZSPBF
D2PAK MOSFETs ROHS

D2PAK MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205290-IRF1404ZSPBF IRF1404ZSPBF-ND IRF1404ZSPBF IRF1404ZSPBF IRF1404ZSPBF IRF1404ZSPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZSPBF Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 200000 milliwatts 200000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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