Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF150DM115 IRF150DM115

Description
150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package The IRF150DM115 is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design enables high power density designs. Developed for customers looking to optimise their thermal design to get the highest power density and efficiency. Targeting power conversion in photovoltiac optimisers, cordless power tools and motor control. Summary of Features Double-side-cooled package Low parasitic inductance Low profile design High current capability 100% lead-free (no RoHS exemption) Benefits Enables designs with high power density High efficiency Minimized EMI Optimized thermals Board space reduction Less device paralleling Potential Applications Solar micro inverter Synchronous rectification DC-DC converter
Request a Quote Datasheet
Description
150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package The IRF150DM115 is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design enables high power density designs. Developed for customers looking to optimise their thermal design to get the highest power density and efficiency. Targeting power conversion in photovoltiac optimisers, cordless power tools and motor control. Summary of Features Double-side-cooled package Low parasitic inductance Low profile design High current capability 100% lead-free (no RoHS exemption) Benefits Enables designs with high power density High efficiency Minimized EMI Optimized thermals Board space reduction Less device paralleling Potential Applications Solar micro inverter Synchronous rectification DC-DC converter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF150DM115 - IRF150DM115 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF150DM115
IRF150DM115
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF150DM115 IRF150DM115
150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package The IRF150DM115 is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design enables high power density designs. Developed for customers looking to optimise their thermal design to get the highest power density and efficiency. Targeting power conversion in photovoltiac optimisers, cordless power tools and motor control. Summary of Features Double-side-cooled package Low parasitic inductance Low profile design High current capability 100% lead-free (no RoHS exemption) Benefits Enables designs with high power density High efficiency Minimized EMI Optimized thermals Board space reduction Less device paralleling Potential Applications Solar micro inverter Synchronous rectification DC-DC converter

150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package

The IRF150DM115 is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design enables high power density designs.

Developed for customers looking to optimise their thermal design to get the highest power density and efficiency. Targeting power conversion in photovoltiac optimisers, cordless power tools and motor control.


Summary of Features

  • Double-side-cooled package
  • Low parasitic inductance
  • Low profile design
  • High current capability
  • 100% lead-free (no RoHS exemption)

Benefits

  • Enables designs with high power density
  • High efficiency
  • Minimized EMI
  • Optimized thermals
  • Board space reduction
  • Less device paralleling

Potential Applications

  • Solar micro inverter
  • Synchronous rectification
  • DC-DC converter
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF150DM115
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF150DM115
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0113 ohms
Unlock Full Specs
to access all available technical data