Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPZA60R037P7

Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS)
  • 500V-950V N-Channel Power MOSFET - IPZA60R037P7 - Infineon Technologies AG
    Infineon Technologies AG
  • OEM Souring - 1463575-IPZA60R037P7 - Win Source Electronics
    Win Source Electronics
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Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS)
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Datasheet
Datasheet Summary
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The IPZA60R037P7 is a 600V CoolMOS™ P7 superjunction MOSFET designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It is packaged in a PG-TO247-4-3 case with a maximum continuous drain current of 74 A at TC=25°C and a pulsed drain current of 280 A. The device features a maximum on-state resistance of 37 mΩ at 25°C, a total gate charge of 121 nC, and an avalanche energy rating of 295 mJ for single pulses. It exhibits ESD robustness exceeding 2 kV (HBM), a body diode commutation speed of 900 A/µs, and thermal resistance from junction to case of 0.49 °C/W. The part is qualified for industrial applications according to JEDEC JESD47/20/22 standards.

Datasheet Summary
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The IPZA60R037P7 is a 600V CoolMOS™ P7 superjunction MOSFET designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It is packaged in a PG-TO247-4-3 case with a maximum continuous drain current of 74 A at TC=25°C and a pulsed drain current of 280 A. The device features a maximum on-state resistance of 37 mΩ at 25°C, a total gate charge of 121 nC, and an avalanche energy rating of 295 mJ for single pulses. It exhibits ESD robustness exceeding 2 kV (HBM), a body diode commutation speed of 900 A/µs, and thermal resistance from junction to case of 0.49 °C/W. The part is qualified for industrial applications according to JEDEC JESD47/20/22 standards.

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Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPZA60R037P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPZA60R037P7
500V-950V N-Channel Power MOSFET IPZA60R037P7
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS)

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • 48 V intermediate bus converter (IBC)
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet
OEM Souring - 1463575-IPZA60R037P7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
OEM Souring
1463575-IPZA60R037P7
OEM Souring 1463575-IPZA60R037P7
Category: OEM Souring Win Source Part Number: 1463575-IPZA60R037P7 Manufacturer: Infineon Technologies

Category: OEM Souring
Win Source Part Number: 1463575-IPZA60R037P7
Manufacturer: Infineon Technologies

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPZA60R037P7 1463575-IPZA60R037P7
Product Name 500V-950V N-Channel Power MOSFET OEM Souring
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0370 ohms
QG 121 nC
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