Infineon Technologies AG N-Channel Power MOSFET IRF3415S

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Benefits

• Planar cell structure for wide SOA
• Optimized for broadest availability from distribution partners
• Product qualification according to JEDEC standard
• Silicon optimized for applications switching below <100kHz
• Industry standard surface-mount power package
• High-current carrying capability package (up to 195 A, die-size dependent)
• Capable of being wave-soldered

Applications

• Light electric vehicles (LEV)

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Manufacturer: Infineon Technologies
Win Source Part Number: 1186965-IRF3415S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.8W, 200W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 43A
Rds On (Maximum) at Id, Vgs: 42mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V

N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK