Infineon Technologies AG N-Channel Power MOSFET IRF3415S

Description
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Applications Light electric vehicles (LEV) Designers who used this product also designed with IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET 1 2
Request a Quote Datasheet
Description
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Applications Light electric vehicles (LEV) Designers who used this product also designed with IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRF3415S - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRF3415S
N-Channel Power MOSFET IRF3415S
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered Applications Light electric vehicles (LEV) Designers who used this product also designed with IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET 1 2

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


Benefits

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

Applications

  • Light electric vehicles (LEV)

Designers who used this product also designed with


  • IRF9540N |
    P-Channel Power MOSFET
  • IRF9540NS |
    P-Channel Power MOSFET
  • IRFR3607 |
    N-Channel Power MOSFET
  • IR2110S |
    Gate driver ICs
  • IRFU5305 |
    P-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRF9540N |
    P-Channel Power MOSFET
  • IRF9540NS |
    P-Channel Power MOSFET
  • IRFR3607 |
    N-Channel Power MOSFET
  • IR2110S |
    Gate driver ICs
  • IRFU5305 |
    P-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRF9540N |
    P-Channel Power MOSFET
  • IRF9540NS |
    P-Channel Power MOSFET

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Supplier's Site Datasheet
FETs - Single - IRF3415S - 1186965-IRF3415S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF3415S
1186965-IRF3415S
FETs - Single - IRF3415S 1186965-IRF3415S
Manufacturer: Infineon Technologies Win Source Part Number: 1186965-IRF3415S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.8W, 200W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 43A Rds On (Maximum) at Id, Vgs: 42mOhm at 22A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1186965-IRF3415S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.8W, 200W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 43A
Rds On (Maximum) at Id, Vgs: 42mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V

Buy Now
Singapore
150V 43A MOSFET Transistor
278-IRF3415S
150V 43A MOSFET Transistor 278-IRF3415S
MOSFET N-CH 150V 43A D2PAK Product overview: IRF3415S from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 43A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 43A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3415S can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 43A D2PAK Product overview: IRF3415S from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 43A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 43A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3415S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF3415S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3415S-ND
Single FETs, MOSFETs IRF3415S-ND
N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3415S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3415S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3415S
MOSFET N-CH 150V 43A D2PAK

MOSFET N-CH 150V 43A D2PAK

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number IRF3415S 1186965-IRF3415S 278-IRF3415S IRF3415S-ND IRF3415S
Product Name N-Channel Power MOSFET FETs - Single - IRF3415S 150V 43A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0420 ohms
TJ 175 C (347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; D2PAK TO-263; SOT3 Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB -55degC ~ 175degC (TJ)
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