Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5NJ5305 IRF5NJ5305

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1227260-IRF5NJ5305 Drain to Source Voltage (Vdss): 55 V Number of Elements: 1 Power Dissipation: 75 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SMD/SMT Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Lead Free: Contains Lead Mount: Surface Mount RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): -16 A Drain to Source Breakdown Voltage: -55 V Drain to Source Resistance: 65 mΩ Gate to Source Voltage (Vgs): 20 V On-State Resistance: 100 mΩ
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1227260-IRF5NJ5305 Drain to Source Voltage (Vdss): 55 V Number of Elements: 1 Power Dissipation: 75 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SMD/SMT Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Lead Free: Contains Lead Mount: Surface Mount RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): -16 A Drain to Source Breakdown Voltage: -55 V Drain to Source Resistance: 65 mΩ Gate to Source Voltage (Vgs): 20 V On-State Resistance: 100 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5NJ5305 - 1227260-IRF5NJ5305 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5NJ5305
1227260-IRF5NJ5305
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5NJ5305 1227260-IRF5NJ5305
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1227260-IRF5NJ5305 Drain to Source Voltage (Vdss): 55 V Number of Elements: 1 Power Dissipation: 75 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SMD/SMT Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Lead Free: Contains Lead Mount: Surface Mount RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Operating Temperature: 150 °C Continuous Drain Current (ID): -16 A Drain to Source Breakdown Voltage: -55 V Drain to Source Resistance: 65 mΩ Gate to Source Voltage (Vgs): 20 V On-State Resistance: 100 mΩ

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1227260-IRF5NJ5305
Drain to Source Voltage (Vdss): 55 V
Number of Elements: 1
Power Dissipation: 75 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SMD/SMT
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Lead Free: Contains Lead
Mount: Surface Mount
RoHS: Non-Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): -16 A
Drain to Source Breakdown Voltage: -55 V
Drain to Source Resistance: 65 mΩ
Gate to Source Voltage (Vgs): 20 V
On-State Resistance: 100 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 1227260-IRF5NJ5305
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5NJ5305
V(BR)DSS -55 volts
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