The IPW65R095C7 is a 650V CoolMOS™ C7 power transistor designed for high-efficiency switching applications such as PFC and PWM stages in computing, server, telecom, UPS, and solar systems. It is packaged in a TO-247 case with a maximum drain-source on-state resistance of 95 mΩ, a gate charge of 45 nC, and a continuous drain current rating of 45 A at 25°C case temperature. The device supports a pulsed drain current of 100 A and has a maximum junction temperature of 150°C. It is qualified for industrial-grade applications per JEDEC standards J-STD-20 and JESD22, and features Pb-free plating and halogen-free mold compound.
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
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MOSFETs HIGH POWERNEW Product overview: IPW65R095C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW65R095C7 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1186481-IPW65R095C7
Family Name: IPW65R095C7
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STW43N60DM2; STW37N60DM2AG; STW36NM60ND; STW45N60DM2AG;
Introduction Date: October 11, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW65R095C7 | 2088-IPW65R095C7 | 1186481-IPW65R095C7 | IPW65R095C7 |
| Product Name | 500V-950V N-Channel Power MOSFET | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R095C7 | MOSFET |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.0950 ohms | |||
| QG | 45 nC | |||
| TJ | -55 to 150 C (-67 to 302 F) |
