Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW65R095C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) EV charging EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes
  • 500V-950V N-Channel Power MOSFET - IPW65R095C7 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R095C7 - 1186481-IPW65R095C7 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) EV charging EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW65R095C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW65R095C7
500V-950V N-Channel Power MOSFET IPW65R095C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) EV charging EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDH10G65C5 | CoolSiC™ Schottky Diodes IMBG120R234M2H | Silicon Carbide MOSFET Discretes

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • 48 V intermediate bus converter (IBC)
  • EV charging

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • IDH10G65C5 |
    CoolSiC™ Schottky Diodes
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IDH10G65C5 |
    CoolSiC™ Schottky Diodes
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IDH10G65C5 |
    CoolSiC™ Schottky Diodes
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R095C7 - 1186481-IPW65R095C7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R095C7
1186481-IPW65R095C7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R095C7 1186481-IPW65R095C7
Manufacturer: Infineon Technologies Win Source Part Number: 1186481-IPW65R095C7 Family Name: IPW65R095C7 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STW43N60DM2; STW37N60DM2AG; STW36NM60ND; STW45N60DM2AG; Introduction Date: October 11, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186481-IPW65R095C7
Family Name: IPW65R095C7
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STW43N60DM2; STW37N60DM2AG; STW36NM60ND; STW45N60DM2AG;
Introduction Date: October 11, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPW65R095C7
MOSFET IPW65R095C7
MOSFET HIGH POWER_NEW

MOSFET HIGH POWER_NEW

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Technical Specifications

  Infineon Technologies AG Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW65R095C7 1186481-IPW65R095C7 IPW65R095C7
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R095C7 MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0950 ohms
QG 45 nC
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