Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRF5NJ6215SCV IRF5NJ6215SCV

The IRF5NJ6215 is a P-channel HEXFET® power MOSFET rated for -150V drain-to-source breakdown voltage and a continuous drain current of -11A at 25°C, with a maximum on-resistance of 0.29Ω at -10V gate-source voltage. It is housed in a surface mount SMD-0.5 package, weighs 1.0 gram, and features hermetic sealing for high-reliability applications. The device supports a maximum power dissipation of 75W, has a junction-to-case thermal resistance of 1.67°C/W, and is rated for single pulse avalanche energy of 130 mJ. Operating junction and storage temperatures range from -55°C to +150°C.