MOSFET N-CH 100V 9.7A D2PAK Product overview: IRF520NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF520NS can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1187029-IRF520NS
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IRF520NS
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.8W, 48W
Alternative Parts (Cross-Reference): IRFW520ATM; FQB13N10TM; FQB13N10LTM;
Introduction Date: May 13, 1998
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 9.7A
Rds On (Maximum) at Id, Vgs: 200mOhm at 5.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 330pF at 25V
N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK
MOSFET N-CH 100V 9.7A D2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors |
| Product Number | 278-IRF520NS | 1187029-IRF520NS | IRF520NS-ND | IRF520NS |
| Product Name | 100V 9.7A MOSFET Transistor | FETs - Single - IRF520NS | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3800 milliwatts | 3800 to 48000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tube | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | -55degC ~ 175degC (TJ) |
| Packing Method | Tube | Tube; Tube | Tube; Tube |
