The IPW60R017C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency power conversion in PFC and LLC topologies, housed in a PG-TO-247 package. It features a maximum on-state resistance of 17 mΩ, a continuous drain current of 129 A at a junction temperature of 150°C, and a pulsed drain current of 495 A. The device supports a dv/dt ruggedness of 120 V/ns and has a body diode di/dt of 200 A/µs. It is qualified for industrial-grade applications according to JEDEC standards (J-STD-20 and JESD22), and is suitable for server, telecom, and solar power applications.
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
Summary of Features
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPW60R017C7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0170 ohms |
| QG | 240 nC |