MOSFET N/P-CH 30V 8SO Product overview: IRF7389PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7389PBF can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 30V 2.5W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 1187245-IRF7389PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: N and P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
Family Part Number: IRF7389PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2.5W
Vds - Drain-Source Breakdown Voltage: 30V
Rds On (Maximum) at Id, Vgs: 29mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 33nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 650pF at 25V
MOSFET N/P-CH 30V 8-SOIC
MOSFET N/P-CH 30V 8SO
Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8
DUAL N/P CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:Complementa
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-IRF7389PBF | IRF7389PBF-ND | 1187245-IRF7389PBF | IRF7389PBF | IRF7389PBF | 70017548 | 19K8270 |
| Product Name | 30V MOSFET Transistor | FET, MOSFET Arrays | FETs - Arrays - IRF7389PBF | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8 | Dual N/p Channel Mosfet, 30V, Soic; Transistor Polarity Infineon |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tube | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | 8-SOIC (0.154", 3.90mm Width) | SO-8 | TO-3 | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | ||||
| Polarity | P-Channel; N and P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts |
