Infineon Technologies AG N-Channel Power MOSFET IRF640NS

Description
200 V Single N-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
  • N-Channel Power MOSFET - IRF640NS - Infineon Technologies AG
    Infineon Technologies AG
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Description
200 V Single N-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
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Datasheet
Datasheet Summary
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The IRF640NSPbF is a 200 V N-channel power MOSFET in a D2-Pak surface-mount package, rated for 18 A continuous drain current at 25°C and 13 A at 100°C. It features a maximum on-resistance of 0.15 Ω at 10 V gate voltage, a gate-to-source voltage rating of ±20 V, and an operating junction temperature range of -55°C to 175°C. The device is fully avalanche rated with a single pulse avalanche energy of 247 mJ and meets RoHS standards for lead-free construction. The D2-Pak package provides low thermal resistance and is suitable for high-current applications with a maximum power dissipation of 150 W.

Datasheet Summary
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The IRF640NSPbF is a 200 V N-channel power MOSFET in a D2-Pak surface-mount package, rated for 18 A continuous drain current at 25°C and 13 A at 100°C. It features a maximum on-resistance of 0.15 Ω at 10 V gate voltage, a gate-to-source voltage rating of ±20 V, and an operating junction temperature range of -55°C to 175°C. The device is fully avalanche rated with a single pulse avalanche energy of 247 mJ and meets RoHS standards for lead-free construction. The D2-Pak package provides low thermal resistance and is suitable for high-current applications with a maximum power dissipation of 150 W.

Suppliers

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N-Channel Power MOSFET - IRF640NS - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRF640NS
N-Channel Power MOSFET IRF640NS
200 V Single N-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered

200 V Single N-Channel IR MOSFET in a D2-Pak package


Benefits

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF640NS
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1500 ohms
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