Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE006NE2LM5SC IQE006NE2LM5SC

Description
OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 25 V PQFN 3.3x3.3 Source-Down DSC: IQE006NE2LM5SC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization). Summary of Features Major reduction in RDS(on) by up to 30% compared to current technology Improved RthJC over current PQFN package technology Standard-gate and center-gate footprints available New, optimized layout possibilities Benefits Enabling highest power density and performance Superior thermal performance Optimized layout possibilities for efficient use of real-estate Simplifying parallel configuration of multiple MOSFETs with center-gate footprint Improved PCB losses Reduced parasitics Potential Applications Drives SMPS Server Telecom OR-ing Battery management Applications 48 V intermediate bus converter (IBC)
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE006NE2LM5SC - IQE006NE2LM5SC - Infineon Technologies AG
    Infineon Technologies AG
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Description
OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 25 V PQFN 3.3x3.3 Source-Down DSC: IQE006NE2LM5SC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization). Summary of Features Major reduction in RDS(on) by up to 30% compared to current technology Improved RthJC over current PQFN package technology Standard-gate and center-gate footprints available New, optimized layout possibilities Benefits Enabling highest power density and performance Superior thermal performance Optimized layout possibilities for efficient use of real-estate Simplifying parallel configuration of multiple MOSFETs with center-gate footprint Improved PCB losses Reduced parasitics Potential Applications Drives SMPS Server Telecom OR-ing Battery management Applications 48 V intermediate bus converter (IBC)
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Datasheet
Datasheet Summary
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The IQE006NE2LM5SC is a 25 V N-channel MOSFET in a PG-WHSON-8 package measuring 3.3 mm x 3.3 mm with a 0.65 mm pitch, designed for high-efficiency power applications. It features a maximum on-resistance of 0.58 mΩ at 20 A and 10 V gate drive, a continuous drain current of 310 A, and a peak avalanche energy rating of 140 mJ. The device is fully qualified for industrial applications per JEDEC standards, is halogen-free per IEC 61249-2-21, and complies with RoHS. Thermal resistance from junction to case is 1.4 °C/W for a single thermal path and 0.7 °C/W with dual-side cooling. The package supports surface-mount assembly with a thermal pad connected to the source terminal for enhanced heat dissipation.

Datasheet Summary
Powered by GS/AI

The IQE006NE2LM5SC is a 25 V N-channel MOSFET in a PG-WHSON-8 package measuring 3.3 mm x 3.3 mm with a 0.65 mm pitch, designed for high-efficiency power applications. It features a maximum on-resistance of 0.58 mΩ at 20 A and 10 V gate drive, a continuous drain current of 310 A, and a peak avalanche energy rating of 140 mJ. The device is fully qualified for industrial applications per JEDEC standards, is halogen-free per IEC 61249-2-21, and complies with RoHS. Thermal resistance from junction to case is 1.4 °C/W for a single thermal path and 0.7 °C/W with dual-side cooling. The package supports surface-mount assembly with a thermal pad connected to the source terminal for enhanced heat dissipation.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE006NE2LM5SC - IQE006NE2LM5SC - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE006NE2LM5SC
IQE006NE2LM5SC
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE006NE2LM5SC IQE006NE2LM5SC
OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 25 V PQFN 3.3x3.3 Source-Down DSC: IQE006NE2LM5SC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization). Summary of Features Major reduction in RDS(on) by up to 30% compared to current technology Improved RthJC over current PQFN package technology Standard-gate and center-gate footprints available New, optimized layout possibilities Benefits Enabling highest power density and performance Superior thermal performance Optimized layout possibilities for efficient use of real-estate Simplifying parallel configuration of multiple MOSFETs with center-gate footprint Improved PCB losses Reduced parasitics Potential Applications Drives SMPS Server Telecom OR-ing Battery management Applications 48 V intermediate bus converter (IBC)

OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

Infineon is presenting the new product of the portfolio extension for the innovative Source-Down technology: the OptiMOSTM 5 25 V PQFN 3.3x3.3 Source-Down DSC: IQE006NE2LM5SC. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.

Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management.

Moreover, with the dual-side cooling package three times more power can be dissipated compared to the overmolded package. The Source-Down portfolio is addressing applications, such as drives, telecom, SMPS or server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization).


Summary of Features

  • Major reduction in RDS(on) by up to 30% compared to current technology
  • Improved RthJC over current PQFN package technology
  • Standard-gate and center-gate footprints available
  • New, optimized layout possibilities

Benefits

  • Enabling highest power density and performance
  • Superior thermal performance
  • Optimized layout possibilities for efficient use of real-estate
  • Simplifying parallel configuration of multiple MOSFETs with center-gate footprint
  • Improved PCB losses
  • Reduced parasitics

Potential Applications

  • Drives
  • SMPS
    • Server
    • Telecom
    • OR-ing
  • Battery management

Applications

  • 48 V intermediate bus converter (IBC)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IQE006NE2LM5SC
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQE006NE2LM5SC
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 5.80E-4 ohms
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