Mosfet Array 2 N-Channel (Dual) 20V 3.5A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 1046575-IRF7101PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 320pF @ 15V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 20V 3.5A 8-SOIC
MOSFET 2N-CH 20V 3.5A 8SO Product overview: IRF7101PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7101PBF can be used for catalog matching and distributor lookup.
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
MOSFET 2N-CH 20V 3.5A 8SO
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | IRF7101PBF-ND | 1046575-IRF7101PBF | IRF7101PBF | IRF7101PBF | 289-IRF7101PBF | 70016974 | IRF7101PBF |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7101PBF | FET, MOSFET Arrays | FET, MOSFET Arrays | 20V 3.5A MOSFET Transistor | 20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | Tube | SO-8 | |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||
| PD | 2000 milliwatts | 2000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
