Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPTG039N15NM5 IPTG039N15NM5

OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ power MOSFET IPTG039N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction. This new package in OptiMOS™ 5 150 V offers very low RDS(on) and is optimized to handle high current. Thanks to the flexibility of gullwing leads, OptiMOS™ in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board (TCoB) compared to the standard requirements (IPC-9701). Among the key benefits, TOLG ensures high efficiency, lower EMI as well as high power density. Summary of Features Best-in-class technology High current rating Low ringing and voltage overshoot 60% space board reduction compared to D2PAK 7-pin Gullwing leads Benefits High performance capability High system reliability High efficiency and lower EMI Optimized board utilization High thermal cycling on board performance Potential Applications E-scooter Light electric vehicles Power tools Battery management system Applications Uninterruptible power supplies (UPS)