The IPTG039N15NM5 is an N-channel MOSFET designed for industrial applications, featuring a 150 V drain-source breakdown voltage and a maximum on-state resistance of 3.9 mΩ at 10 V gate-source voltage and 50 A drain current. It supports a continuous drain current of 190 A and a pulsed drain current of 760 A, with 100% avalanche testing up to 344 mJ. The device is packaged in an PG-HSOG-8 case measuring 10.1 mm × 11.9 mm × 2.4 mm, with gullwing leads and a footprint compatible with TO-Leadless packages. It operates from -55 °C to 175 °C and meets RoHS and IEC61249-2-21 halogen-free requirements. Thermal resistance from junction to case is 0.47 °C/W, and junction-to-ambient is 40 °C/W on a 6 cm² copper area. The transistor is fully qualified per JEDEC for industrial use.
OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance
The OptiMOS™ power MOSFET IPTG039N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction. This new package in OptiMOS™ 5 150 V offers very low RDS(on) and is optimized to handle high current.
Thanks to the flexibility of gullwing leads, OptiMOS™ in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board (TCoB) compared to the standard requirements (IPC-9701).
Among the key benefits, TOLG ensures high efficiency, lower EMI as well as high power density.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPTG039N15NM5 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPTG039N15NM5 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0039 ohms |
| QG | 74 nC |
