IPT60T040S7 is a 600 V CoolMOS™ S7 trench SJ MOSFET with an integrated temperature sensor in the PG-HSOF-8 package, designed for low-frequency, high-current switching applications such as solid-state relays and line rectification in high-power systems. It has a maximum drain-source on-state resistance of 40 mΩ, a continuous drain current rating of 13 A, and a pulsed drain current capability of 203 A. The device supports a maximum junction temperature of 150°C, with extended operation up to 175°C for up to 50 hours in application lifetime. Thermal resistance from junction to case is 0.51 °C/W, and the compact PG-HSOF-8 package measures 10.28 to 10.58 mm by 9.70 to 10.10 mm with a height of 11.48 to 11.88 mm. The part is fully qualified according to JEDEC standards for industrial applications.
600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in TOLL (PG-HSOF-8) for an increased junction temperature sensing accuracy
The CoolMOS™ S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.
The temperature sensor enhances CoolMOS™ S7 features, allowing the best possible utilization of the power transistor.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT60T040S7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60T040S7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0400 ohms |
| QG | 83 nC |
