Mosfet Array 2 N-Channel (Dual) 30V 4.9A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 017495-IRF7303TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 520pF @ 25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 4.9A 8SO Product overview: IRF7303TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7303TRPBF can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
HEXFET N-Ch MOSFET 4.9A 30V SOIC8
MOSFET 2N-CH 30V 4.9A 8-SOIC
DUAL N CHANNEL MOSFET, 30V, 4.9A; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.05ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 30V 4.9A 8SO
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF7303PBFDKR-ND | 017495-IRF7303TRPBF | 289-IRF7303TRPBF | IRF7303TRPBF | 8268841P | 8268841 | IRF7303TRPBF | 39M3567 | IRF7303TRPBF | IRF7303TRPBF |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7303TRPBF | 30V 4.9A MOSFET Transistor | MOSFETs | MOSFETs | FET, MOSFET Arrays | Dual N Channel Mosfet, 30V, 4.9A; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Tape & Reel (TR) | SO8 | SOIC | Soic | 8-SOIC (0.154", 3.90mm Width) | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||
| PD | 2000 milliwatts | 2 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
