Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
Product Name | Notes |
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-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6845 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6845 A... | |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6796 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line MIL-PRF-19500/557 Similar Parts 2N6796... | |
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6784 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6784 A... | |
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6790 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6790 A... | |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A 2N6768 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6768 A... | |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance. | |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 21.0 amperes optimized with low on resistance. | |
60V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package Benefits Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and... | |
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 124 amperes optimized with low on resistance Applications DIN rail power supplies | |
A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. Potential Applications Automotive 48V Motor Drive Brushless Motor... | |
N-channel enhancement mode Field-Effect Transistor (FET), 60V, SOT-23 The 2N7002 is an n-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly... | |
N-Channel Small Signal MOSFET 60 V in SOT363 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed... | |
The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding... | |
The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more... | |
The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility,... | |
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling... | |
The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC... | |
With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency,... |
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