Infineon Technologies AG Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANS2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6845 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6845 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6845 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6845 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANS2N7237U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN9240 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7237U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN9240 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANS2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package - A IRHQ567110 with RadHard Hermetic Packaging Benefits Proven performance and reliability in space applications. Packaged on a... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package - A IRHQ6110 with RadHard Hermetic Packaging Benefits proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package - Screening Level TXV Benefits Proven performance and reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package - Standard Packaging Benefits Proven performance and reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package - Standard Packaging Benefits proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRHQ6110... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package - A JANTX2N7336 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Quad N-Channel MOSFET in a 28-pin LCC package - A IRHQ57110 with RadHard Hermetic Packaging Benefits Proven performance and reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line... | |
| 100V Quad N-Channel MOSFET in a 28-pin LCC package - A IRHQ7110 with RadHard Hermetic Packaging Benefits proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Quad N-Channel MOSFET in a 28-pin LCC package - Similar to IRHQ57110 with optional Total Dose Rating of 300kRads Benefits Proven performance and reliability in space applications. Packaged on... | |
| 100V Quad N-Channel MOSFET in a 28-pin LCC package - Standard Packaging Benefits Proven performance and reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRHQ57110 A... | |
| 100V Quad N-Channel MOSFET in a 28-pin LCC package - Standard Packaging Benefits proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRHQ7110 A IRHQ7110 with... | |
| 100V Quad N-Channel MOSFET in a MO-036AB package - A JANTX2N7334 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG110 A IRFG110... | |
| 100V Quad P-Channel MOSFET in a 28-pin LCC package - A IRHQ9110 with RadHard Hermetic Packaging Benefits proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Quad P-Channel MOSFET in a 28-pin LCC package - Screening Level TXV Benefits Proven performance and reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRHQ597110... | |
| 100V Quad P-Channel MOSFET in a 28-pin LCC package - Standard Packaging Benefits Proven performance and reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRHQ597110 A... | |
| 100V Quad P-Channel MOSFET in a 28-pin LCC package - Standard Packaging Benefits proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRHQ9110 A IRHQ9110 with... | |
| 100V Quad P-Channel MOSFET in a MO-036AB package - A JANTX2N7335 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG9110 A IRFG9110... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6796 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6796 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6796 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6796 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTX2N7218 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM140 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTXV2N7218 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM140 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7219U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN240 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7219U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN240 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6784 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6784 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6784 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6784 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTXV2N7225 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM250 A... | |
| 250V 100kRad Hi-Rel Quad N -Channel SEE Hardened MOSFET in a 28-pin LCC package - Standard Packaging Benefits Proven performance and reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing... | |
| 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - A IRL5NJ7413 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRL5NJ7413 A... | |
| 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TX Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRL5NJ7413 A IRL5NJ7413 with... | |
| 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TXV Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRL5NJ7413 A IRL5NJ7413 with... | |
| 400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTX2N6800U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts JANTX2N6800U... | |
| 400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTXV2N6800U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts JANTX2N6800U... | |
| 400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7227U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN350 A... | |
| 500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTX2N6802U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFE430... | |
| 500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTXV2N6802U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFE430... | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A JANTX2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A JANTXV2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| 55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - A IRL5NJ024 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRL5NJ024 A... | |
| 55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TX Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRL5NJ024 A IRL5NJ024 with... | |
| 55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Standard Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRL5NJ024 A IRL5NJ024 with Hermetic... | |
| ad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7468U2A Features Single event effect (SEE)... | |
| Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed Slash Sheet Similar Parts IRHNJ9130 SMD-0.5, 100 krad(Si)... | |
| Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached Slash Sheet Similar Parts IRHNJ9130 SMD-0.5, 100 krad(Si) TID, COTS... | |
| Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS Slash Sheet Similar Parts IRHNJ9130 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ9130A SMD-0.5,... | |
| Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL, Lead Attached Slash Sheet Similar Parts IRHNJ9130 SMD-0.5, 100 krad(Si) TID, COTS... | |
| Rad hard, -100V, -11A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS Slash Sheet Similar Parts IRHNJ9130 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ9130A SMD-0.5,... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed Features Single event effect (SEE) hardened. Low RDS(on)... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL, Lead Attached and Formed Features Single event effect (SEE) hardened. Low RDS(on)... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL, Lead Attached Features Single event effect (SEE) hardened. Low RDS(on) Low total... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, COTS Features Low RDS(on) Single event effect (SEE) hardened Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL Features Low RDS(on) Single event effect (SEE) hardened Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL Features Low RDS(on) Single event effect (SEE) hardened Low total gate charge... | |
| Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package Slash sheet Similar Parts IRHNMC597110 SMD-0.2, 100 krad(Si) TID, COTS IRHNM597110 SMD-0.2, 100 krad(Si) TID, COTS JANSR2N7506U8C SMD-0.2,... | |
| Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS, Lead form down Features Single event effect (SEE)... | |
| Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Identical pre-... | |
| Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down Features Single event effect (SEE)... | |
| Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre-... | |
| Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on)</li><li>Prot on tolerant Low total... | |
| Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total... | |
| Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tabless TO-257AA package, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved SOA for... | |
| Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tabless TO-257AA package, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved SOA for... | |
| Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic package, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved... | |
| Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic package, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LCC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LCC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS Slash Sheet Similar Parts IRHNJ9230 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ9230SCS SMD-0.5,... | |
| Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL Slash Sheet Similar Parts IRHNJ9230 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ9230SCS SMD-0.5,... | |
| Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7519U3 Features Single event effect (SEE)... | |
| Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7523T1 Features... | |
| Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UBN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UBN, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. 5V CMOS and TTL Compatible Fast... | |
| Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. 5V CMOS and TTL Compatible Fast... | |
| Rad hard, -60V, -45A, P-channel MOSFET, R9 in TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS Summary of Features Single event effect (SEE) hardened (up to... | |
| Rad hard, -60V, -45A, P-channel MOSFET, R9 in TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 300 krad(Si) TID, COTS Summary of Features Single event effect (SEE) hardened (up to... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7524U2S Features Single event effect (SEE)... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Repetitive avalanche ratings Dynamic... | |
| Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Repetitive avalanche ratings Dynamic... | |
| Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching... | |
| Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 300 krad TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching... | |
| Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 100 krad TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad TID, COTS Features Low RDS(on) Fast switching Single event effect (SEE) hardened. Low total... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad TID, QIRL Features Low RDS(on) Fast switching Single event effect (SEE) hardened. Low total... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad TID, QIRL NOTE: this part is superseded by JANSR2N7648U3 Features Low RDS(on) Fast switching... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad TID, QPL Features Low RDS(on) Fast switching Single event effect (SEE) hardened. Low total... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad TID, COTS Features Low RDS(on) Fast switching Single event effect (SEE) hardened. Low total... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad TID, QIRL NOTE: this part is superseded by JANSR2N7648U3 Features Low RDS(on) Fast switching... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad TID, QPL Features Low RDS(on) Fast switching Single event effect (SEE) hardened. Low total... | |
| Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7503U8 Features Single event effect (SEE)... | |
| Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on)</li><li>Fast switching Low total gate... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7469U2A Features Single event effect (SEE)... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7469U2A Features Single event effect (SEE)... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 500 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Ultra Low RDS(on) Low total gate... | |
| Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Ultra Low RDS(on) Low total gate... | |
| Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7464T2 Features Single event effect (SEE)... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7476T1 Features... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7584T1 Features... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 300 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 500 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7649D5 Features... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7649T3 Features... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 3.7A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 3.7A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QIRL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 3.7A, single, N-channel MOSFET, R5 in a SMD-0.2C package - 100 krad(Si) TID, QIRL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple... | |
| Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed Features Single event effect (SEE) hardened. Ultra low... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached Features Single event effect (SEE) hardened. Ultra low RDS(on). Low... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 400V, 5.3A, single, N-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS Slash Sheet Similar Parts IRHNJ7330SE SMD-0.5, 100 krad(Si) TID, COTS JANSR2N7465U3 SMD-0.5,... | |
| Rad hard, 400V, 5.3A, single, N-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Slash sheet Similar Parts IRHNJ7330SE SMD-0.5, 100 krad(Si) TID, COTS JANSR2N7465U3 SMD-0.5,... | |
| Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Ultra low RDS(on) Low total gate... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7652U2A Features Single event effect (SEE)... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad(Si) TID, QIRL NOTE: this part is superseded by JANSR2N7652U2A Features Single event effect (SEE)... | |
| Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| -12V Single P-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support... | |
| -20V P-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| -20V Single P-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support... | |
| -20V Single P-Channel StrongIRFET™ MOSFET in a TSOP-6 (Micro 6) package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| -20V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| -30V Single P-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support... | |
| -30V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| 100V HEXFET Power MOSFET in a D-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for 10 V gate... | |
| 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits RoHS Compliant Low RDS(on) Industry-leading quality Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated 175°C Operating Temperature Logic Level... | |
| 100V Single N-Channel HEXFET Power MOSFET in a Micro 3 package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for... | |
| 100V Single N-Channel IR MOSFET in a D-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 100V Single N-Channel IR MOSFET™ in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon... | |
| 100V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTX2N7225 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM250 A... | |
| 20V Dual N-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 20V N-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| 20V Single N-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support... | |
| 20V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| 30V Dual N-Channel StrongIRFET™ Power MOSFET in a PQFN 2x2 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 30V Single N-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support... | |
| 30V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| 40 V Logic Level StrongIRFET™ power MOSFET in D2PAK 7pin The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| 40 V Single N-Channel HEXFET power MOSFET in a D²PAK package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 5 V gate... | |
| 40V Single N-Channel HEXFET Power MOSFET in a D2Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for 10... | |
| 40V Single N-Channel Logic Level StrongIRFET™ Power MOSFET in a DirectFET™ ME package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices... | |
| 40V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ L8 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 40V StrongIRFET™ Power MOSFET The IRL40T209 is a 40 V Logic Level StrongIRFETTM power MOSFET featuring high current capability and typical RDS(on) of 0.59 mOhm in a 10... | |
| 55V Single N-Channel IR MOSFET in a D-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 55V Single N-Channel IR MOSFET in a SOT-223 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 55V Single N-Channel Power MOSFET in a D2-Pak package Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC... | |
| 55V Single N-Channel Power MOSFET in a I-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Fuel-cell control unit (FCCU) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic... | |
| 60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 60V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| ISC165N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill... | |
| Low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio With the combined portfolio of Infineon's OptiMOS™ and StrongIRFET power MOSFET families, Infineon offers the right choice for all... | |
| New logic level MOSFETs for low VGS Available in three different voltage classes (60 V, 80 V and 100 V), Infineon’s new logic level power MOSFETs are highly suitable for... | |
| New logic level MOSFETs for low VGS Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom... | |
| OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal... | |
| OptiMOS™ 5 power MOSFET 100 V, 2.6 mOhm, 248 A, in sTOLL - 7x8 mm2 power MOS package The IST026N10NM5 OptiMOS™ 5 power MOSFET 100 V in sTOLL package... | |
| OptiMOS™ 5 power MOSFET 25 V, 2.4 mΩ, smallest form factor in PQFN 2x2 package With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a... | |
| OptiMOS™ 5 power MOSFET 30 V, 3.6 mΩ, smallest form factor in PQFN 2x2 package With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a... | |
| OptiMOS™ 5 Single N-Channel Linear FET 100 V, 11.3 mΩ, 63 A in a PQFN 3.3x3.3 package ISZ113N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a... | |
| OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package ISC035N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a... | |
| OptiMOS™ 5 Single N-Channel Linear FET 80 V, 2.55 mΩ, 199 A in a SuperSO8 (5x6) package ISC025N08NM5LF2 is Infineon’s new best-in-class 80 V OptiMOS™ 5 Linear FET in a... | |
| OptiMOS™ 5 Single N-Channel Power MOSFET 60 V, 1.05 mΩ, 330 A in a SSO8 package Infineon’s OptiMOS™ 5 Power MOSFET 60V in SuperSO8 package (ISC010N06NM5) offers low on-state resistance... | |
| OptiMOS™ 6 dual N-channel 40 V MOSFETs in a scalable power block package Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2... | |
| OptiMOS™ 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with... | |
| OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ | |
| OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in PQFN 3.3x3.3 package ISZ080N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in PQFN 3.3x3.3 package ISZ230N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC022N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC027N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC030N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC060N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC080N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC230N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in PQFN 3.3x3.3 package OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in S308 package ISZ173N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package ISC044N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package ISC055N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package ISC079N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 200 V in PQFN 3.3x3.3 package ISZ520N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC130N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density,... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC151N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density,... | |
| OptiMOS™ 6 power MOSFET 40 V in smallest form factor PQFN 2x2 package With the new best-in-class OptiMOSTM 6 product family, Infineon offers a benchmark solution for efficiency in... | |
| OptiMOS™ 6 power MOSFET 40 V normal level in a SSO8 package The ISC012N04NM6 is part of the BiC OptiMOSTM 6 40V NL product family, offering a benchmark solution... | |
| OptiMOS™ 6 power MOSFET 40 V normal level with latest Infineon technology in a SuperSO8 package With this best-in-class OptiMOSTM 6 power MSOFET 40V normal level, Infineon offers a... | |
| OptiMOS™ 6 power MOSFET 40V sTOLL - 7x8mm2 power MOS package The OptiMOS™ 6 power MOSFET 40V in sTOLL package features very low RDS(on) of 0.60mOhm and 475A... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in PQFN 3.3 x 3.3 package This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in PQFN 3.3 x 3.3 package This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 33... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 3.2 mOhm on-resistance. ISC032N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 32 mOhm on-resistance. ISC320N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 10.4 mOhm on-resistance. ISC104N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 11 mOhm on-resistance. ISC110N12NM6 is part of... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance. ISC037N12NM6 is part of... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 7.8 mOhm on-resistance. ISC078N12NM6 is part of... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2 ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS... | |
| OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA170170N04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA250250N04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 30 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 30 V (ISA150233C03LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 30 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 30 V (ISA220280C03LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA170230C04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA250300C04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast... | |
| OptiMOS™ P-Channel MOSFET 100V in SOT-223 OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| OptiMOS™ P-Channel MOSFET 150V in SOT-223 OptiMOS™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with... | |
| P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in PQFN 3.3x3.3 package represents the new technology targeted for battery... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 150 V in PQFN 3.3x3.3 package represents the new technology targeted for battery... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 150 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery... | |
| P-channel power MOSFETs 100 V in SOT-223 package for automotive applications ISP16DP10LMA features a low RDS(on) of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET... | |
| Rad hard, 250V, 3.7A, N-channel MOSFET, R5 in SMD-0.2C package - 100 krad(Si) TID, COTS Summary of Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple... | |
| StrongIRFET™ 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 2.8 mOhm in a... | |
| StrongIRFET™ 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a... | |
| StrongIRFET™ 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.6 mOhm in a... | |
| The ISC011N06LM5, Infineon's OptiMOS™ MOSFET in the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the... | |
| The ISC012N04LM6 OptiMOSTM 6 40V in logic level is setting a new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer... | |
| The OptiMOS™ 5 60V power MOSFET ISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom... | |
| Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6 ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in... |
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