IRF630N is a 200V N-channel MOSFET designed for high-efficiency switching applications, available in TO-220AB, D2-Pak, and TO-262 packages. It has a continuous drain current of 9.3A at 25°C and a maximum on-resistance of 0.30Ω at 10V gate voltage. The device supports an operating junction temperature up to 175°C and is fully avalanche rated with a single pulse avalanche energy of 94mJ. It meets RoHS standards and is lead-free. Thermal resistance is 1.83°C/W junction-to-case for the TO-220AB package, and 40°C/W junction-to-ambient when mounted on a PCB. The part is qualified to industry standards for reliability in commercial and industrial applications.
200V Single N-Channel MOSFET in a TO-220 package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
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DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 200V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| Infineon Technologies AG | Radwell International | |
|---|---|---|
| Product Category | Power MOSFET | RF Transistors |
| Product Number | IRF630N | 32466586 |
| Product Name | N-Channel Power MOSFET | Transistor |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.3000 ohms |
