Infineon Technologies AG N-Channel Power MOSFET IRF630N

Description
200V Single N-Channel MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High-current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency applications Standard pin-out allows for drop-in replacement High current capability Applications Light electric vehicles (LEV) Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IKW75N60T | IGBT discretes IDP15E65D2 | Silicon Diodes IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IKW75N60T | IGBT discretes IDP15E65D2 | Silicon Diodes IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET 1 2
Request a Quote Datasheet
Description
200V Single N-Channel MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High-current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency applications Standard pin-out allows for drop-in replacement High current capability Applications Light electric vehicles (LEV) Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IKW75N60T | IGBT discretes IDP15E65D2 | Silicon Diodes IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IKW75N60T | IGBT discretes IDP15E65D2 | Silicon Diodes IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRF630N - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRF630N
N-Channel Power MOSFET IRF630N
200V Single N-Channel MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High-current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency applications Standard pin-out allows for drop-in replacement High current capability Applications Light electric vehicles (LEV) Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IKW75N60T | IGBT discretes IDP15E65D2 | Silicon Diodes IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IKW75N60T | IGBT discretes IDP15E65D2 | Silicon Diodes IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET 1 2

200V Single N-Channel MOSFET in a TO-220 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.


Summary of Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current rating

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Standard pin-out allows for drop-in replacement
  • High current capability

Applications

  • Light electric vehicles (LEV)
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IRF100P219 |
    N-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRF9540N |
    P-Channel Power MOSFET
  • IRF9540NS |
    P-Channel Power MOSFET
  • IKW75N60T |
    IGBT discretes
  • IDP15E65D2 |
    Silicon Diodes
  • IRF100P219 |
    N-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRF9540N |
    P-Channel Power MOSFET
  • IRF9540NS |
    P-Channel Power MOSFET
  • IKW75N60T |
    IGBT discretes
  • IDP15E65D2 |
    Silicon Diodes
  • IRF100P219 |
    N-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
Transistor - 32466586 - Radwell International
Willingboro, NJ, United States
Transistor
32466586
Transistor 32466586
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 200V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 200V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Infineon Technologies AG Radwell International
Product Category Power MOSFET RF Transistors
Product Number IRF630N 32466586
Product Name N-Channel Power MOSFET Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.3000 ohms
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