Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1012011-IRF5N5210SCV
Packaging: Bulk
Drain to Source Voltage (Vdss): -100 V
Power Dissipation: 125 W
Height: 3.58 mm
Number of Channels: 1
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRF540NSTRLPBF; IRFH5406TRPBF; SIS434DN-T1-GE3; SIR422DP-T1-GE3; SI4154DY-T1-GE3;
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Schedule B: 8541290080
Turn-On Delay Time: 28 ns
Max Junction Temperature (Tj): 150 °C
Continuous Drain Current (ID): -31 A
Drain to Source Breakdown Voltage: -100 V
Turn-Off Delay Time: 103 ns
Drain to Source Resistance: 60 mΩ
Gate to Source Voltage (Vgs): 20 V
On-State Resistance: 100 mΩ
| Win Source Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 1012011-IRF5N5210SCV |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5N5210SCV |
| V(BR)DSS | -100 volts |
| rDS(on) | 0.0600 ohms |
| PD | 125000 milliwatts |
