The IPW65R060CM8 is a 650 V silicon N-channel MOSFET in a PG-TO247-3 package, designed for high-efficiency switching applications such as PFC stages and LLC resonant converters. It features a maximum drain-source on-state resistance of 60 mΩ, a pulsed drain current of 148 A, and an integrated fast body diode with a reverse recovery charge up to 0.72 μC. The device supports an extended junction temperature up to 175 °C for short durations and meets JEDEC industrial qualification standards. Thermal resistance from junction to case is 0.55 K/W. The package dimensions are standardized to the PG-TO247-3 outline, with a lead spacing of 5.44 mm and case dimensions between 20.80 mm and 21.10 mm in length.
650 V CoolMOS™ 8 power transistor
The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7.
It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPW65R060CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPW65R060CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0600 ohms |
| QG | 52 nC |
