Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRF150P221 IRF150P221

150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 Package Summary of Features Very low RDS(on) Excellent gate charge x RDS(on) (FOM) Optimized Qrr 175°C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners Benefits Reduced conduction losses Ideal for high switching frequency Lower overshoot voltage Increased reliability versus 150°C rated parts Halogen-free according to IEC61249-2-21 Applications 48 V to 12 V DC-DC converter DIN rail power supplies On-board charging (OBC) for electric vehicles Designers who used this product also designed with IMZA65R027M1H | Silicon Carbide MOSFET Discretes IMZ120R060M1H | Silicon Carbide MOSFET Discretes IDH20G120C5 | CoolSiC™ Schottky Diodes IMZA65R027M1H | Silicon Carbide MOSFET Discretes IMZ120R060M1H | Silicon Carbide MOSFET Discretes IDH20G120C5 | CoolSiC™ Schottky Diodes IMZA65R027M1H | Silicon Carbide MOSFET Discretes IMZ120R060M1H | Silicon Carbide MOSFET Discretes IDH20G120C5 | CoolSiC™ Schottky Diodes