The IRF4905PbF is a P-channel power MOSFET designed for high-current switching applications, featuring a TO-220 package with a maximum continuous drain current of 74 A at 25°C and a drain-to-source breakdown voltage of -55 V. It has an ultra-low on-resistance of 0.02 Ω at -10 V gate-source voltage and is rated for 175°C junction temperature operation. The device is fully avalanche rated with a single pulse avalanche energy of 930 mJ and supports a peak diode recovery dv/dt of -5.0 V/ns. It meets RoHS standards and is lead-free. Thermal resistance from junction to case is 0.75 °C/W, and junction-to-ambient is 62 °C/W when mounted on a flat, greased surface.
-55V Single P-Channel Power MOSFET in a TO-220 package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRF4905 |
| Product Name | P-Channel Power MOSFET |
| Polarity | P-Channel; P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0200 ohms |
