Infineon Technologies AG Datasheets for Gate Drivers
Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
Gate Drivers: Learn more
| Product Name | Notes |
|---|---|
| 1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN6550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective... | |
| 1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN7550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective... | |
| 1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN7550U is a non-isolated gate-driver IC and available in an ultrasmall TSNP package. It has truly differential inputs enabling cost-effective... | |
| 1-channel non-isolated gate-driver IC family with truly differential inputs The 1EDN8550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective... | |
| 10 A, 3 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 12 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking... | |
| 10 A, 3.0 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking... | |
| 10 A, 5.7 kV (rms) single-channel isolated gate driver with active miller clamp, UL 1577 & VDE 0884-11 certified, 8 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 10... | |
| 10 A, 5.7 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 8 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking... | |
| 10 A, 5.7 kV (rms) single-channel isolated gate driver with two-level slew-rate control and active Miller clamp, UL 1577 & VDE 0884-11 certified EiceDRIVER™ 2L-SRC Compact single-channel isolated gate driver... | |
| 10 A, 5.7 kV (rms) single-channel isolated gate driver with two-level slew-rate control, UL 1577 & VDE 0884-11 certified EiceDRIVER™ 2L-SRC Compact single-channel isolated gate driver with two-level slew-rate control... | |
| 120 V boot 3 A high and low side junction isolated gate drivers The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating... | |
| 120 V boot 3 A high and low side junction isolated gate drivers The 2EDL8033G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating... | |
| 120 V boot 3 A high and low side junction isolated gate drivers The 2EDL8033G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating... | |
| 120 V boot 4 A high and low side junction isolated gate drivers The 2EDL8034G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating... | |
| 120 V boot 4 A high and low side junction isolated gate drivers The 2EDL8034G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating... | |
| 120 V boot 4 A high and low side junction isolated gate drivers The 2EDL8034G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating... | |
| 120 V high side and low side 2EDL8023G3C EiceDRIVER™ 2EDL8023G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8023G3C takes... | |
| 120 V high side and low side 2EDL8123G3C EiceDRIVER™ 2EDL8024G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8024G3C takes... | |
| 120 V high side and low side 2EDL8123G3C EiceDRIVER™ 2EDL8123G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8123G3C takes... | |
| 120 V high side and low side 2EDL8124G3C EiceDRIVER™ 2EDL8124G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8124G3C takes... | |
| 1200 V dual high-side gate driver IC with galvanic isolation, DESAT and short circuit clamping EiceDRIVER™ 1200 V 2-channel isolated gate driver with 2 A current, DESAT protection, Miller clamp... | |
| 1200 V half-bridge gate driver IC with galvanic isolation, comparator and OPAMP EiceDRIVER™ 1200 V half-bridge Gate Driver IC for IGBT, MOSFET and SiC MOSFET with typical 1.5 A source... | |
| 1200 V single channel high-side gate driver EiceDRIVER™ SENSE 1200 V single channel high-side gate driver for IGBT and high voltage automotive applications in PG-DSO-36 package. Please also find the... | |
| 1200 V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping EiceDRIVER™ 1200 V isolated gate driver with 2 A current, DESAT protection, Miller clamp... | |
| 1200 V single high-side gate driver IC with galvanic isolation, active Miller clamp and short circuit clamping EiceDRIVER™ 1200 V high side gate driver IC with typical 4.4 A source... | |
| 1200 V single high-side gate driver IC with galvanic isolation, short circuit clamping and separate sink/source outputs EiceDRIVER™ 1200 V high side gate driver IC with typical 4.0 A source... | |
| 1200 V single high-side gate driver IC with galvanic isolation, short circuit clamping and separate sink/source outputs EiceDRIVER™ 1200 V high-side gate driver IC with typical 4.0 A source and... | |
| 1200 V single high-side gate driver IC with UL certification, active Miller clamp, DESAT and short circuit clamping EiceDRIVER™ 1200 V isolated gate driver with 2 A current, DESAT protection,... | |
| 1200 V single high-side gate driver IC with UL certified galvanic isolation, active Miller clamp and short circuit clamping EiceDRIVER™ 1200 V high-side gate driver IC with typical 4.4 A... | |
| 1200 V single high-side gate driver IC with UL certified galvanic isolation, short circuit clamping and separate sink/source outputs EiceDRIVER™ 1200 V high side Gate Driver IC with typical 4.0... | |
| 1200 V single high-side gate driver IC with UL certified galvanic isolation, short circuit clamping and separate sink/source outputs EiceDRIVER™ 1200 V high-side single channel gate driver IC with typical... | |
| 1200 V single-channel gate driver with separate output and short circuit clamping EiceDRIVER™ Compact single-channel isolated gate driver with 9.4/10 A output current in DSO-8 narrow package with 4 mm... | |
| 1200 V, 0.65 A three phase gate driver with integrated bootstrap diode and over current protection in DSO-24 package EiceDRIVER™ 1200 V three-phase gate driver with typical 0.35 A source... | |
| 1200 V, 10 A single-channel isolated gate driver with separate output and short circuit clamping EiceDRIVER™ Compact single-channel isolated gate driver with 9.4/10 A output current in DSO-8 narrow package... | |
| 1200 V, 4 A single-channel gate driver with separate output and short circuit clamping EiceDRIVER™ Compact single-channel isolated gate driver with 3.5/4 A output current in DSO-8 narrow package with... | |
| 1200 V, 4 A single-channel isolated gate driver with separate output and short circuit clamping EiceDRIVER™ Compact single-channel isolated gate driver with 3.5/4 A output current in DSO-8 narrow package... | |
| 1200 V, 4.4 A single-channel isolated gate driver with Miller clamp and short circuit clamping EiceDRIVER™ Compact single-channel isolated gate driver with 4.1/4.4 A output current, active Miller clamp in... | |
| 1200 V, 7.5 A single-channel isolated gate driver with separate output and short circuit clamping EiceDRIVER™ Compact single-channel isolated gate driver with 6.8/7.5 A output current in DSO-8 narrow package... | |
| 14 A, 3 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 14 A typical sinking and... | |
| 14 A, 5.7 kV (rms) single-channel gate driver IC with separate output, UL 1577 & VDE 0884-11 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver IC with 14... | |
| 14 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 & VDE 0884-11 certified, 8 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A... | |
| 14 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 14 A typical sinking and... | |
| 14 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 8 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 14 A typical sinking and... | |
| 1700 V dual channel IGBT Gate Driver board EiceDRIVER™ Safe - Dual channel IGBT gate driver board for Infineon IGBT modules up to 1700 V with reinforced isolation. Summary of... | |
| 18 A, 5.7 kV (rms) single-channel isolated gate driver with two-level slew-rate control and active Miller clamp, UL 1577 & VDE 0884-11 certified EiceDRIVER™ 2L-SRC Compact single-channel isolated gate driver... | |
| 18 A, 5.7 kV (rms) single-channel isolated gate driver with two-level slew-rate control, UL 1577 & VDE 0884-11 certified EiceDRIVER™ 2L-SRC Compact single-channel isolated gate driver with two-level slew-rate control... | |
| 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The 1EDN7116U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as... | |
| 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The 1EDN7126U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as... | |
| 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The 1EDN7136U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as... | |
| 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The 1EDN7146U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as... | |
| 200 V three-phase gate driver IC with over current protection, enable and fault reporting EiceDRIVER™ Compact - Full bridge 3 Phase gate driver IC with LS-SOI technology to control power... | |
| 25 V single-channel low-side gate driver with integrated fault reporting and enable functionality EiceDRIVER™ 25 V single-channel low-side non-inverting gate driver IC for MOSFETs or IGBTs with typical 2.6 A... | |
| 25 V single-channel low-side gate driver with integrated over-current protection (OCP), fault reporting and enable functionality EiceDRIVER™ 25 V single-channel low-side non-inverting gate driver IC for IGBTs with typical 2.6... | |
| 25 V single-channel low-side gate driver with integrated over-current protection (OCP), fault reporting and enable functionality EiceDRIVERTM 25 V single-channel low-side non-inverting gate driver for MOSFET and IGBT with... | |
| 25 V single-channel low-side MOSFET gate driver with integrated fast over-current protection (OCP), fault reporting and enable functionality EiceDRIVER™ 25 V single-channel low-side non-inverting gate driver for MOSFET with typical... | |
| 3 A, 5.7 kV single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL 1577 & VDE 0884-11 certified EiceDRIVER™ Enhanced single-channel highly flexible isolated gate... | |
| 48 V smart high-side MOSFET gate driver with SPI for automotive applications The EiceDRIVERTM 2ED4820-EM is a smart high-side N-channel MOSFET Gate driver with two outputs controlled via SPI. | |
| 5.5 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 & VDE 0884-11 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A... | |
| 5.5 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 & VDE 0884-11 certified, 8 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A... | |
| 5.5 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A typical sinking and... | |
| 5.5 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 8 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A typical sinking and... | |
| 5.5 A, 5.7 kV (rms) single-channel isolated gate driver with seperate output, 180 ns input filter, UL 1577 & VDE 0884-11 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate... | |
| 5.7 kV, 3 A single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL 1577 certified EiceDRIVER™ Enhanced single-channel highly flexible isolated gate driver with ±3... | |
| 5.7 kV, 6 A single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL1577 certified EiceDRIVER™ Enhanced single-channel highly flexible isolated gate driver with ±6 A... | |
| 5.7 kV, 9 A single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL 1577 certified EiceDRIVER™ Enhanced single-channel highly flexible isolated gate driver with ±9... | |
| 6 A, 5.7 kV (rms) single-channel isolated gate driver with short-circuit protection, active Miller clamp and soft-off, UL 1577 & VDE 0884-11 certified EiceDRIVER™ Enhanced single-channel isolated gate driver with... | |
| 6 A, 5.7 kV single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL 1577 & VDE 0884-11 certified EiceDRIVER™ Enhanced single-channel highly flexible isolated gate... | |
| 600 V half-bridge Gate Driver IC with integrated bootstrap diode (BSD) 600 V half-bridge gate driver IC with integrated bootstrap diode with typical 0.02 A source and 0.08 A sink... | |
| 600 V half-bridge gate driver IC with integrated bootstrap diode, over current protection, enable and fault reporting EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology... | |
| 600 V half-bridge gate driver IC with integrated bootstrap diode EiceDRIVER™ Compact - Optimized 600 V half-bridge gate driver IC with LS-SOI technology to control IGBTs. Summary of Features Individual... | |
| 600 V half-bridge gate driver IC with integrated bootstrap diode EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to control IGBTs Summary of Features Individual... | |
| 600 V half-bridge gate driver IC with integrated bootstrap diode EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to control MOS-transistors Summary of Features Individual... | |
| 600 V three-phase gate driver IC with integrated bootstrap diode, over current protection, enable and fault reporting EiceDRIVER™ Compact - Full bridge 3 Phase gate driver IC with LS-SOI technology... | |
| 650 V Half Bridge Gate Driver IC with Integrated Bootstrap Diode (BSD) EiceDRIVER™ 650 V Infineon SOI half-bridge gate driver IC with integrated Bootstrap Diode for IGBTs and MOSFETs with... | |
| 650 V half-bridge gate driver with integrated bootstrap diode 650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for... | |
| 650 V high speed, half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs Based on our SOI-technology,... | |
| 650 V high-side and low-side gate driver with integrated bootstrap diode 650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents... | |
| 650 V high-side and low-side gate driver with integrated bootstrap diode 650 V high speed, high-side and low-side gate driver with typical 0.29 A source and 0.7 A sink currents... | |
| 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-14 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29... | |
| 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-8 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29... | |
| 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode in DSO-14 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current,... | |
| 650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode in DSO-8 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current,... | |
| 650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-14 package 650 V high and low side high speed power MOSFET and IGBT gate driver... | |
| 650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-8 package 650 V high and low side high speed power MOSFET and IGBT gate driver... | |
| 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-14 package 650 V half-bridge high current, and high speed gate driver for... | |
| 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-8 package 650 V half-bridge high current, and high speed gate driver for... | |
| 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package 650 V half-bridge high current, and high speed gate driver for MOSFETand... | |
| 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical... | |
| 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package 650 V half-bridge high current, and high speed gate driver for MOSFETand... | |
| 650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical... | |
| 650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-14 package 650 V high and low side gate driver with high current,... | |
| 650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-8 package 650 V high and low side gate driver with high current,... | |
| 8.5 A, 5.7 kV (rms) single-channel isolated gate driver with short-circuit protection and active Miller clamp, UL 1577 & VDE 0884-11 certified EiceDRIVER™ Enhanced single-channel isolated gate driver with +6... | |
| 9 A, 5.7 kV single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL 1577 & VDE 0884-11 certified EiceDRIVER™ Enhanced single-channel highly flexible isolated gate... | |
| EiceDRIVERTM 650 V 2nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in TSSOP-25 package for IGBTs and MOSFETs. | |
| Dual-channel IGBT Gate Driver board EiceDRIVER™ Safe - Dual-channel IGBT gate driver board for Infineon IGBT modules up to 1700 V with reinforced isolation. Summary of Features High peak output... | |
| Dual-channel junction-isolated gate driver - EiceDRIVER™ 2EDL8024G The EiceDRIVER™ 2EDL8024G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC... | |
| EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8123G The EiceDRIVER™ 2EDL8123G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom... | |
| EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8124G The EiceDRIVER™ 2EDL8124G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom... | |
| EiceDRIVER™ 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200... | |
| EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and... | |
| EiceDRIVER™ 1200 V high-side/low-side gate driver IC with 2.3 A source, 2.3 A sink current in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and... | |
| EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The... | |
| EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2230S12C provides unique advantages including... | |
| EiceDRIVER™ 1200 V three-phase gate driver with typical 0.35 A source and 0.65 A sink currents in DSO-24 lead package for IGBT (Insulated Gate Biploar Transistor) / SiC(Silicon Carbide) Module... | |
| EiceDRIVER™ 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The EiceDRIVER™ 1EDN7116G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG)... | |
| EiceDRIVER™ 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The EiceDRIVER™ 1EDN7126G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG)... | |
| EiceDRIVER™ 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The EiceDRIVER™ 1EDN7136G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG)... | |
| EiceDRIVER™ 200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs The EiceDRIVER™ 1EDN7146G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG)... | |
| EiceDRIVER™ 2EDN Gate Driver for MOSFETs and WBG switches Fast dual-channel 4A gate driver optimized for driving both standard and super-junction MOSFETs, as well as wide band gap power switching... | |
| EiceDRIVER™ 2EDN Gate Driver for MOSFETs and WBG switches Fast dual-channel 5A gate driver optimized for driving both standard and super-junction MOSFETs, as well as wide band gap power switching... | |
| EiceDRIVER™ Automotive - Galvanic isolated dual channel IGBT driver IC Summary of Features Coreless transformer isolated driver Integrated protection features Suitable for operation at high ambient temperature Automotive Qualified 2A... | |
| EiceDRIVER™ Automotive - Galvanic isolated single channel IGBT driver IC Summary of Features Coreless transformer isolated driver Basic insulation according to DIN EN 60747-5-2, pending Integrated protection features Suitable for... | |
| EiceDRIVER™ Automotive - Galvanic isolated single channel IGBT driver IC Summary of Features Coreless transformer isolated driver Integrated protection features Suitable for operation at high ambient temperature Automotive Qualified 2A... | |
| EiceDRIVER™ Boost - single channel booster for automotive applications IGBT / MOSFET gate driver booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for... | |
| EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs. It offers... | |
| EiceDRIVER™ Compact single-channel isolated gate driver with 6 A sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs. 1ED3140MU12F belongs to the EiceDRIVER™ | |
| EiceDRIVER™ Compact single-channel isolated gate driver with 6 A sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs. 1ED3141MU12F belongs to the EiceDRIVER™ | |
| EiceDRIVER™ Compact single-channel isolated gate driver with 6 A sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs. 1ED3142MU12F belongs to the EiceDRIVER™ | |
| EiceDRIVER™ Compact single-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in 8-pin LDSO wide body package for IGBTs, MOSFETs and SiC MOSFETs. Summary... | |
| EiceDRIVER™ Enhanced 3 A, 5.7 kV single-channel highly flexible isolated gate driver with ±3 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package... | |
| EiceDRIVER™ Enhanced 5.7 kV, 3 A single-channel highly flexible isolated gate driver with ±3 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package... | |
| EiceDRIVER™ Enhanced 5.7 kV, 6 A single-channel highly flexible isolated gate driver with ±6 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package... | |
| EiceDRIVER™ Enhanced 5.7 kV, 9 A single-channel highly flexible isolated gate driver with ±9 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package... | |
| EiceDRIVER™ Enhanced 6 A, 5.7 kV single-channel highly flexible isolated gate driver with ±6 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package... | |
| EiceDRIVER™ Enhanced 8.5 A, 5.7 kV (rms) single-channel isolated gate driver with +6 A / -8.5 A typical sourcing and sinking peak output current in a DSO-16 wide body package... | |
| EiceDRIVER™ Enhanced 9 A, 5.7 kV single-channel highly flexible isolated gate driver with ±9 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package... | |
| EiceDRIVERTM 650 V 2nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in DSO-28 package for IGBTs and MOSFETs. Summary... | |
| EiceDRIVERTM 650V 2nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in DSO-28 package for IGBTs and MOSFETs. Summary of... | |
| Fast dual-channel 5A gate driver optimized for driving both standard and super-junction MOSFETs, as well as wide band gap power switching devices. The EiceDRIVER™ 2EDN family is offered in 8-pin... | |
| Fast dual-channel 5A gate driver optimized for driving both standard and superjunction MOSFETs, as well as GaN power switching devices. The input signals are low voltage TTL and 3.3V CMOS-compatible... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate driver with accurate and stable timing The EiceDRIVER™ 2EDF9275F is a functional isolated gate-driver IC in a 150mil DSO-16 package, designed for the... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB7259K is a dual channel isolated gate driver IC with floating outputs. The strong 5... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB7259Y is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB8259F is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB8259K is a dual channel isolated gate driver IC with floating outputs. The strong 5... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB8259Y is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDB9259Y is a dual-channel isolated gate driver IC with floating outputs. The strong 5 A/9... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDR7259X is a reinforced isolated gate driver IC for control over the mandatory safe isolation... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDR8258X is a reinforced isolated gate driver IC for control over the mandatory safe isolation... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDR8259X is a reinforced isolated gate driver IC for control over the mandatory safe isolation... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDR9258X is a reinforced isolated gate driver IC for control over the mandatory safe isolation... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDR9259X is a reinforced isolated gate driver IC for control over the mandatory safe isolation... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary side control of... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF7275K is a functional isolated gate driver designed for high-performance DC-DC medium-voltage, half- and full-bridge... | |
| Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDF8275F is the perfect fit for robust and stable operation for primary side control of... | |
| Fast, robust, dual-channel, reinforced isolated MOSFET gate driver with accurate and stable timing The EiceDRIVER™ 2EDS9265H is a reinforced isolated gate-driver IC in a 300mil DSO-16 package, designed for the... | |
| Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDR6258X is a reinforced isolated gate driver IC for control over the mandatory safe isolation... | |
| Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDR8259H is a reinforced isolated gate driver IC for control over the mandatory safe isolation... | |
| Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDS7165H is a reinforced isolated gate driverfor secondary-side control over the mandatory safe isolation barrier... | |
| Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDS8265H is a reinforced isolated gate driverfor secondary-side control over the mandatory safe isolation barrier... | |
| GaN EiceDRIVER™ gate driver IC with excellent robustness and efficiency, the perfect fit to drive gallium nitride (GaN) HEMTs The new single-channel galvanically isolated gate driver IC component 1EDS5663H is... | |
| GaN EiceDRIVER™ gate driver IC with excellent robustness and efficiency, the perfect fit to drive gallium nitride (GaN) HEMTs The single-channel galvanically isolated gate driver IC 1EDF5673F is a perfect... | |
| GaN EiceDRIVER™ gate driver IC with excellent robustness and efficiency, the perfect fit to drive gallium nitride (GaN) HEMTs The single-channel galvanically isolated gate driver IC 1EDF5673K is a perfect... | |
| Isolated single channel IGBT driver for high voltage automotive applications EiceDRIVER™ SIL - automotive qualified single Channel IGBT Driver with on-chip galvanic insulation (up to 6kV) Summary of Features Support... | |
| MOTIX™ 160 V half bridge SOI based gate driver with typical 1 A source and 2 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel MOSFETS... | |
| MOTIX™ 160 V half bridge SOI based gate driver with typical 8 A source and 4 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel MOSFETS... | |
| Rugged, cool and fast, 1-channel low-side 4/8A gate driver ICs 1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate... | |
| Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER™ 1EDB family of single-channel gate-driver ICs provides an input-to-output isolation of 3 kVrms. With +6/-4 ns propagation... | |
| Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER™ 1EDB7275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the... | |
| Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER™ 1EDB8275F provides an input-to-output isolation of 3 kVrms. With a propagation delay accuracy of +6/-4 ns, the... | |
| Smart analog high-side MOSFET gate driver for 12 V/ 24 V automotive applications The EiceDRIVER™ APD 2ED2410-EM is a smart high-side N-channel MOSFET gate driver with two outputs controlled via... | |
| The 1EDI2004AS is a high-voltage IGBT gate driver designed for automotive motor drives above 5 kW The 1EDI2004AS is based on Infineon’s Coreless Transformer (CLT) technology, providing galvanic isolation between... | |
| The 2EP100R is a full-bridge transformer driver integrated circuit in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage to supply isolated gate... | |
| The 2EP101R is a full-bridge transformer driver integrated circuit in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage to supply isolated gate... | |
| The 2EP110R is a full-bridge transformer driver integrated circuit in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage to supply isolated gate... | |
| The 2EP130R is a full-bridge transformer driver integrated circuit in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage to supply isolated gate... | |
| The EiceDRIVER™ 1EDI3020AS is an automotive qualified single channel high voltage gate driver optimized for IGBT technologies. The EiceDRIVER™ 1EDI3020AS uses robust Infineon Coreless Transformer Technology to provide bi-directional signal... | |
| The EiceDRIVER™ 1EDI3021AS is an automotive qualified single channel high voltage gate driver optimized for IGBT technologies. The EiceDRIVERTM 1EDI3021AS uses robust Infineon Coreless Transformer Technology to provide bi-directional... | |
| The EiceDRIVER™ 1EDI3023AS is an automotive qualified single channel high voltage gate driver optimized for IGBT technologies. The EiceDRIVERTM 1EDI3023AS uses robust Infineon Coreless Transformer Technology to provide bi-directional... | |
| The EiceDRIVER™ 1EDI3030AS is an automotive qualified single channel high voltage gate driver optimized for SiC MOSFET. The EiceDRIVER™ 1EDI3030AS uses robust Infineon Coreless Transformer Technology to provide bi-directional signal... | |
| The EiceDRIVER™ 1EDI3031AS is an automotive qualified single channel high voltage gate driver optimized for SiC MOSFET The EiceDRIVERTM 1EDI3031AS uses robust Infineon Coreless Transformer Technology to provide bi-directional... | |
| The EiceDRIVER™ 1EDI3033AS is an automotive qualified single channel high voltage gate driver optimized for SiC MOSFET The EiceDRIVERTM 1EDI3033AS uses robust Infineon Coreless Transformer Technology to provide bi-directional... | |
| The EiceDRIVER™ 1EDI3051AS is galvanically isolated using Infineon’s coreless transformer technology. Comprehensive safety features and ISO 26262 compliance enable system level ASIL D classification, while accompanying safety documents ease FMEDA... | |
| The EiceDRIVER™ 1EDL8011 provides fast turn-on/ turn-off of high-side N-channel MOSFETs with its powerful gate current capabilities. For battery-powered applications, 1EDL8011 is used to manage inrush current & protects in... | |
| The EiceDRIVER™ gate driver 1EDI3025AS is a high voltage IGBT driver designed for automotive applications, with 8 kV galvanic insulation using coreless transformer (CT) technology. It features a powerful output... | |
| The EiceDRIVER™ gate driver 1EDI3026AS is a high voltage IGBT driver for automotive applications, offering 8 kV galvanic insulation with coreless transformer (CT) technology. It provides a powerful output stage... | |
| The EiceDRIVER™ gate driver 1EDI3028AS is a high voltage IGBT driver for automotive applications, providing 8 kV galvanic insulation with coreless transformer (CT) technology. It offers a powerful output stage... | |
| The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to... | |
| The EiceDRIVER™ gate driver 1EDI3038AS is a high voltage SiC MOSFET driver for automotive applications, offering 8 kV galvanic insulation with coreless transformer (CT) technology. It provides a powerful output... | |
| Three-phase motor control gate driver IC for battery supplied BLDC motor control The MOTIX™ 6ED2742S01Q is a 160 V SOI based gate driver designed for three phase BLDC motor drive... |
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