The IPT60R075CFD7 is a 600V N-channel MOSFET based on CoolMOS™ CFD7 superjunction technology, designed for high-efficiency resonant topologies such as phase-shift full-bridge and LLC converters in server, telecom, and EV charging applications. It comes in a PG-HSOF-8 package measuring 10.58mm x 10.10mm x 11.88mm and features an ultra-fast body diode with a reverse recovery charge of 0.51μC and a peak reverse recovery current of 7.9A. The device has a maximum drain-source on-state resistance of 75mΩ at 25°C, a gate charge of 51nC, and can handle a pulsed drain current of 97A. It supports a maximum junction temperature of 150°C, has a drain-source breakdown voltage of 600V, and is fully qualified according to JEDEC for industrial applications.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT60R075CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R075CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0750 ohms |
| QG | 51 nC |
