The IPT65R155CFD7 is a 650 V CoolMOS™ CFD7 superjunction N-channel MOSFET designed for high-efficiency resonant switching topologies such as LLC and phase-shift full-bridge (ZVS) in industrial applications including server, telecom, EV charging, and solar systems. It is housed in a PG-HSOF-8 package measuring 10.28-10.58 mm by 9.70-10.10 mm, with a drain tab for thermal management. The device features a maximum drain-source on-state resistance of 155 mΩ at 25°C, a pulsed drain current of 55 A, and a gate charge of 27 nC. It has a best-in-class reduced switching loss and low RDS(on) temperature dependence, along with an ultra-fast body diode capable of 1300 A/µs commutation speed. The MOSFET is fully qualified per JEDEC standards for industrial applications and meets a maximum junction temperature of 150°C with a thermal resistance from junction to case of 1.02 °C/W.
The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R155CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Summary of Features
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Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT65R155CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT65R155CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1550 ohms |
