IPW60R180 - 600V CoolMOS N-Channel Power MOSFET
MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190P6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190P6FKSA1
Win Source Part Number: 1007921-IPW60R190P6F
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P6
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Power Dissipation (Max): 151W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPW60R190P6,INFINFIP
Base Product Number: IPW60R190
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3
MOSFET N-CH 600V 20.2A TO247-3
MOSFET, N-CH, 600V, 20.2A, 151W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 600V 20.2A TO247-3
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW60R190P6FKSA1 | 278-IPW60R190P6FKSA1 | 1007921-IPW60R190P6FKSA1 | IPW60R190P6FKSA1-ND | IPW60R190P6FKSA1 | 54X5233 | IPW60R190P6FKSA1 |
| Product Name | 600V 20.2A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 20.2A, 151W; Channel Type Infineon | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | PG-TO247-3 | Tube | SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | TO-247; TO-247-3 |
| Packing Method | Tube; Tube | Tube | Tube; Tube | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 600 volts | 600 volts |
