Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPZA65R018CFD7 IPZA65R018CFD7

Description
650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications Uninterruptible power supplies (UPS)
Request a Quote Datasheet
Description
650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPZA65R018CFD7 - IPZA65R018CFD7 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPZA65R018CFD7
IPZA65R018CFD7
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPZA65R018CFD7 IPZA65R018CFD7
650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Potential Applications Fast EV charging Server power supply Solutions for solar energy systems Telecom infrastructure Applications Uninterruptible power supplies (UPS)

650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 4-pin package

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.


Summary of Features

  • Ultrafast body diode and very low Qrr
  • 650V breakdown voltage
  • Significantly reduced switching losses compared to competition
  • Lowest RDS(on) dependency over temperature

Benefits

  • Excellent hard-commutation ruggedness
  • Extra safety margin for designs with increased bus voltage
  • Enabling increased power density
  • Outstanding light-load efficiency in industrial SMPS applications
  • Improved full-load efficiency in industrial SMPS applications
  • Price competitiveness compared to alternative offerings in the market

Potential Applications

  • Fast EV charging
  • Server power supply
  • Solutions for solar energy systems
  • Telecom infrastructure

Applications

  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPZA65R018CFD7
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPZA65R018CFD7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0180 ohms
QG 234 nC
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