Infineon Technologies AG Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220... | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in D2PAK package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R130PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS™ 7 offering for high-power lighting and industrial SMPS applications. The... | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R310PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. | |
| A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance,... | |
| Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear... | |
| CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease... | |
| CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss... | |
| CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. Summary... | |
| Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more... | |
| Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB020N08N5 offers a R... | |
| Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a R... | |
| Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations,... | |
| Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R070CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations,... | |
| Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R105CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations,... | |
| Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS... | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineon’s OptiMOS™ 100V, 120V and 150V families combine very low on-state resistance (R DS(on)) and fastest switching behavior, providing outstanding performance to a wide range of industrial and consumer... | |
| Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both... | |
| Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor... | |
| Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary... | |
| Infineon's answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market,... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| IPAN60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPB038N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to... | |
| IPB051N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was... | |
| IPB057N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was... | |
| IPB085N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy StrongIRFET™ and OptiMOS™ 3 150 V products. OptiMOS™ 6 150 V technology was designed... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need... | |
| OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used... | |
| OptiMOS™ 5 100 V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100 V power MOSFET IPB020N10N5... | |
| OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB017N10N5 from... | |
| OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB032N10N5 from... | |
| OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon... | |
| OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a... | |
| OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are... | |
| OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet chargers. In addition, these devices are a... | |
| OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in... | |
| OptiMOS™ 5 single N-channel Linear FET 2 100 V, 2,1 mΩ, 176 A in D²PAK 3-pin The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package IPB029N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB068N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB339N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 13.3 mOhm on-resistance. IPB133N12NM6 is... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 2.2 mOhm on-resistance. IPB022N12NM6 is... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 3.5 mOhm on-resistance. IPB035N12NM6 is... | |
| OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these... | |
| OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power... | |
| OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of... | |
| OptiMOS™ P-Channel MOSFET 100V in D²PAK OptiMOS™ P-Channel MOSFETs 100V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| OptiMOS™ P-Channel MOSFET 100V in D²PAK OptiMOS™P-Channel MOSFETs 100V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage... | |
| OptiMOS™ P-Channel MOSFET 150V in DPAK OptiMOS™ P-channel MOSFETs 150V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| P-channel enhancement mode Field-Effect Transistor (FET), -30 V, D-PAK Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key... | |
| P-Channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-Channel MOSFETs 100V in D²PAK package represents the new technology targeted for battery management, load... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load... | |
| P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery... | |
| P-Channel MOSFETs in normal level, reducing design complexity in medium and low power applications OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load... | |
| Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 3.5 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 40 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.25 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel Power MOSFET 40 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.45 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 40 V in DPAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 2.9 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.8 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 2.9 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features lowest RDS(on) of 1.3 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in DPAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 2.85 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.9 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.6 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of... | |
| The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in... | |
| The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R090CFD7 in a D... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R110CFD7 in a D... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R155CFD7 in a D... | |
| The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new... | |
| The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new... | |
| Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in... |
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