Power MOSFET Datasheets

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
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Power MOSFET Datasheets From:
Headquarters
Fuji Electric Corp. of America
United States
Texas Instruments
United States
Win Source Electronics
United States
Nexperia B.V.
Netherlands
Integra Technologies, Inc.
El Segundo, CA
Karl Kruse GmbH & Co. KG
Germany
ROHM Semiconductor GmbH
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
Solid State Devices, Inc.
La Mirada, CA
Twilight Technology Inc.
Anaheim, CA
Universal Semiconductor, Inc.
San Jose, CA
Utmel Electronic Limited
China
Advanced Semiconductor, Inc.
United States
Advanced Thermal Solutions, Inc.
United States
Allied Electronics, Inc.
Fort Worth, TX
Broadcom Inc.
San Jose, CA
California Eastern Laboratories - CEL
Santa Clara, CA
Central Semiconductor Corp.
United States
DIODES Incorporated
United States
Fuji Electric Global
Japan
IXYS Corporation
United States
JCET Group
Milpitas, CA
Kexin Co., Ltd.
China
Leshan Radio Company, Ltd.
China
Littelfuse, Inc.
United States
Microsemi Corp.
United States
Motorola Solutions, Inc.
United States
NCEPOWER 
China
NEC Corporation
United States
onsemi
United States
Panasonic
Newark, NJ
Renesas Electronics Corporation
Milpitas, CA
ROHM Co., Ltd.
Japan
Sanken Electric Co., Ltd.
Japan
Siemens AG
Germany
STMicroelectronics, Inc.
United States
STMicroelectronics
Switzerland
Taiwan Semiconductor Manufacturing Company, Ltd.
United States
Texas Instruments High-Performance Analog
United States
Torex Semiconductor, Ltd.
Japan
Toshiba Corporation
Japan
Toshiba Semiconductor & Storage Products
United States
TRINAMIC Motion Control GmbH & Co. KG.
Germany
Vishay Intertechnology, Inc.
United States
Vishay Precision Group
United States
WeEn Semiconductors
China