Infineon Technologies AG Datasheets for Bipolar RF Transistors
Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR135W | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP53-16 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP56-10 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP69-25 | |
| NPN Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S:... | |
| NPN Silicon AF Transistor Summary of Features High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications For general AF... | |
| NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package... | |
| NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package... | |
| NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching... | |
| NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) BCR108S: Two internally isolated transistors with good matching... | |
| NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S / U: Two internally isolated transistors with good matching... | |
| NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S : Two internally isolated transistors with good matching in... | |
| NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| NPN Silicon Digital Transistor Summary of Features Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) BCR133S: Two internally... | |
| NPN/PNP Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according... | |
| PNP Silicon AF Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistor with good matching in on package Pb-free (RoHS compliant) package... |
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