Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2903ZPBF IRF2903ZPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046432-IRF2903ZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 240nC @ 10V Max Input Capacitance: 6320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2903ZPBF - 1046432-IRF2903ZPBF - Win Source Electronics
    Win Source Electronics
  • IRF2903ZPBF - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - 448-IRF2903ZPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF2903ZPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de - 70017875 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046432-IRF2903ZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 240nC @ 10V Max Input Capacitance: 6320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2903ZPBF - 1046432-IRF2903ZPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2903ZPBF
1046432-IRF2903ZPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2903ZPBF 1046432-IRF2903ZPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046432-IRF2903ZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 240nC @ 10V Max Input Capacitance: 6320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1046432-IRF2903ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 290W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 6320pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
- IRF2903ZPBF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IRF2903ZPBF
IRF2903ZPBF
HEXFET Power MOSFET

HEXFET Power MOSFET

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
30V 75A MOSFET Transistor
278-IRF2903ZPBF
30V 75A MOSFET Transistor 278-IRF2903ZPBF
MOSFET N-CH 30V 75A TO220AB Product overview: IRF2903ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2903ZPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 75A TO220AB Product overview: IRF2903ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2903ZPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IRF2903ZPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRF2903ZPBF-ND
Single FETs, MOSFETs 448-IRF2903ZPBF-ND
N-Channel 30V 75A (Tc) 290W (Tc) Through Hole TO-220AB

N-Channel 30V 75A (Tc) 290W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF2903ZPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF2903ZPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF2903ZPBF
MOSFET N-CH 30V 75A TO220AB

MOSFET N-CH 30V 75A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF2903ZPBF
MOSFET IRF2903ZPBF
MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg

MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de - 70017875 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
70017875
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de 70017875
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046432-IRF2903ZPBF IRF2903ZPBF 278-IRF2903ZPBF 448-IRF2903ZPBF-ND IRF2903ZPBF IRF2903ZPBF 70017875
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2903ZPBF 30V 75A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 290000 milliwatts 290 milliwatts 290000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO220-3 Tube TO-220; TO-220-3 TO-220; TO-220-3 TO-220
Unlock Full Specs
to access all available technical data