Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPT60R102G7

Description
A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. Summary of Features CoolMOS™ C7 Gold SJ MOSFET Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint TO-Leadless package Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements Production cost reduction by moving to SMD through quicker assembly times Potential Applications Telecom Server Solar Industrial SMPS Applications DIN rail power supplies Microinverter solutions Telecommunication infrastructure Designers who used this product also designed with 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDS7165H | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDS7165H | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 1 2 3
  • 500V-950V N-Channel Power MOSFET - IPT60R102G7 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPT60R102G7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. Summary of Features CoolMOS™ C7 Gold SJ MOSFET Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint TO-Leadless package Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements Production cost reduction by moving to SMD through quicker assembly times Potential Applications Telecom Server Solar Industrial SMPS Applications DIN rail power supplies Microinverter solutions Telecommunication infrastructure Designers who used this product also designed with 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDS7165H | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDS7165H | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 1 2 3
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
500V-950V N-Channel Power MOSFET - IPT60R102G7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPT60R102G7
500V-950V N-Channel Power MOSFET IPT60R102G7
A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. Summary of Features CoolMOS™ C7 Gold SJ MOSFET Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint TO-Leadless package Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements Production cost reduction by moving to SMD through quicker assembly times Potential Applications Telecom Server Solar Industrial SMPS Applications DIN rail power supplies Microinverter solutions Telecommunication infrastructure Designers who used this product also designed with 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDS7165H | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDS7165H | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 2EDR8259X | Gate driver ICs 1 2 3

A new SMD package using Kelvin source concept

For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.


Summary of Features

CoolMOS™ C7 Gold SJ MOSFET

  • Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
  • Enables best-in-class R DS(on) in smallest footprint

TO-Leadless package

  • Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH)
  • Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
  • Enables improved thermal performance R th

Benefits

  • Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept
  • Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
  • Production cost reduction by moving to SMD through quicker assembly times

Potential Applications

  • Telecom
  • Server
  • Solar
  • Industrial SMPS

Applications

  • DIN rail power supplies
  • Microinverter solutions
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 1ED3120MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDS7165H |
    Gate driver ICs
  • BSC028N06NS |
    N-Channel Power MOSFET
  • BSC035N10NS5 |
    N-Channel Power MOSFET
  • 2EDR8259X |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDS7165H |
    Gate driver ICs
  • BSC028N06NS |
    N-Channel Power MOSFET
  • BSC035N10NS5 |
    N-Channel Power MOSFET
  • 2EDR8259X |
    Gate driver ICs

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Supplier's Site Datasheet
Transistors - IPT60R102G7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPT60R102G7
Transistors IPT60R102G7
HSOF-8 MOSFETs ROHS

HSOF-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPT60R102G7 IPT60R102G7
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1020 ohms
QG 34 nC
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