Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6845 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6845 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6796 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line MIL-PRF-19500/557 Similar Parts 2N6796... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6784 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6784 A... | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore,... | |
| Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board... | |
| Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET), 60V, SOT-23 The 2N7002 is an n-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly... | |
| The AIKQB120N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system... | |
| The AIKQB160N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system... | |
| The AIKQB200N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system... | |
| The AIKYX120N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30%... | |
| The AIKYX160N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30%... | |
| The AIKYX200N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30%... | |
| The AIMW120R045M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance. The increase of switching frequency for a converter... | |
| The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high... | |
| The automotive IGBT discrete AIKQ200N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high... | |
| The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding... | |
| The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more... | |
| The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility,... | |
| The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved... | |
| The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling... | |
| The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC... | |
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Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW40N65DF5 -- AIKW40N65DF5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW40N65DH5 -- AIKW40N65DH5
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TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. Summary of Features 650V blocking voltage Max junction temperature 175°C... |
| With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency,... | |
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Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIGBE40N65F5 -- AIGBE40N65F5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DF5 -- AIKB30N65DF5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DH5 -- AIKB30N65DH5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB40N65DF5 -- AIKB40N65DF5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB40N65DH5 -- AIKB40N65DH5
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World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V... |
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