The IPW65R040CM8 is a 650 V silicon N-channel power MOSFET for high-efficiency switching applications like PFC and LLC converters. Packaged in a PG-TO247-3 case measuring 20.8-21.1 mm by 15.7-16.1 mm, it has a maximum on-state resistance of 40 mΩ and a pulsed drain current of 230 A. It features an integrated fast body diode with a reverse recovery charge up to 1.1 µC and a peak recovery current of 11.8 A. The device supports an extended junction temperature up to 175°C for ≤50 h and is JEDEC-qualified for industrial use. Thermal resistance from junction to case is 0.38 K/W. It includes ESD protection classified as HBM Class 2 and demonstrates dv/dt ruggedness up to 120 V/ns.
650 V CoolMOS™ 8 power transistor
The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7.
It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPW65R040CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPW65R040CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0400 ohms |
| QG | 80 nC |
