Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPZ60R099P6

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulato r) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs. EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs