Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPZ60R099P6

Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulato r) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs. EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs
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Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulato r) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs. EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs
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Datasheet
Datasheet Summary
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The IPZ60R099P6 is a 600V CoolMOS™ P6 power MOSFET designed for high-efficiency switching applications such as PFC, hard-switching PWM, and resonant stages in computing, server, telecom, and UPS systems. It is packaged in a PG-TO-247-4 case with a 4-pin Kelvin source configuration for improved gate control. The device has a maximum drain-source on-state resistance of 99 mΩ, a pulsed drain current of 109 A, and a gate charge of 70 nC. It supports a maximum junction temperature of 150°C and is qualified for industrial-grade applications according to JEDEC J-STD-20 and JESD22 standards. The MOSFET features high dv/dt ruggedness up to 100 V/ns and a body diode di/dt capability of 250 A/μs.

Datasheet Summary
Powered by GS/AI

The IPZ60R099P6 is a 600V CoolMOS™ P6 power MOSFET designed for high-efficiency switching applications such as PFC, hard-switching PWM, and resonant stages in computing, server, telecom, and UPS systems. It is packaged in a PG-TO-247-4 case with a 4-pin Kelvin source configuration for improved gate control. The device has a maximum drain-source on-state resistance of 99 mΩ, a pulsed drain current of 109 A, and a gate charge of 70 nC. It supports a maximum junction temperature of 150°C and is qualified for industrial-grade applications according to JEDEC J-STD-20 and JESD22 standards. The MOSFET features high dv/dt ruggedness up to 100 V/ns and a body diode di/dt capability of 250 A/μs.

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Supplier Links
500V-950V N-Channel Power MOSFET - IPZ60R099P6 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPZ60R099P6
500V-950V N-Channel Power MOSFET IPZ60R099P6
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulato r) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs. EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.


Summary of Features

  • Reduced gate charge (Q g)
  • Higher V th
  • Good body diode ruggedness
  • Optimized integrated R g
  • Improved dv/dt from 50V/ns
  • CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

  • Improved effciency especially in light load condition
  • Better efficiency in soft switching applications due to earlier turn-off
  • Suitable for hard- & soft-switching topologies
  • Optimized balance of efficiency and ease of use and good controllability of switching behavior
  • High robustness and better efficiency
  • Outstanding quality & reliability

Potential Applications

  • PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
  • PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

  • 48 V intermediate bus converter (IBC)

Please also find our 2EDL EiceDRIVER™ Compact 600V half bridge gate driver IC family. With level-shift SOI (Silicon-On-Insulator) technology, monolithic integrated low-ohmic and ultrafast bootstrap diodes for either IGBTs or MOSFETs.


EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPZ60R099P6
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0990 ohms
QG 70 nC
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