Infineon Technologies AG FET, MOSFET Arrays IRF7104PBF

Mosfet Array 2 P-Channel (Dual) 20V 2.3A 2W Surface Mount 8-SO

MOSFET 2P-CH 20V 2.3A 8SO Product overview: IRF7104PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7104PBF can be used for catalog matching and distributor lookup.

MOSFET P-Channel 20V 2.3A SOIC8

Manufacturer: Infineon Technologies
Win Source Part Number: 1187164-IRF7104PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 P-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Family Part Number: IRF7104PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 2.3A
Rds On (Maximum) at Id, Vgs: 250mOhm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 290pF at 15V