Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPT65R033G7

Description
A new SMD package using Kelvin source concept The CoolMOS™ C7 Gold superjunction MOSFET series (G7) for the first time brings together the benefits of the improved 650V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW. Summary of Features CoolMOS™ C7 Gold Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G Enables best-in-class R DS(on) in smallest footprint TOLL package Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS™ C7 enabling faster switching leading to higher efficiency Power density trough BIC 33mΩ in 115mm 2 TOLL footprint Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use TOLL package is easy to use and has the highest quality standards Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible Potential Applications SMPS Telecom Server Solar
  • 500V-950V N-Channel Power MOSFET - IPT65R033G7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
A new SMD package using Kelvin source concept The CoolMOS™ C7 Gold superjunction MOSFET series (G7) for the first time brings together the benefits of the improved 650V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW. Summary of Features CoolMOS™ C7 Gold Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G Enables best-in-class R DS(on) in smallest footprint TOLL package Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS™ C7 enabling faster switching leading to higher efficiency Power density trough BIC 33mΩ in 115mm 2 TOLL footprint Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use TOLL package is easy to use and has the highest quality standards Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible Potential Applications SMPS Telecom Server Solar
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Datasheet
Datasheet Summary
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The IPT65R033G7 is a 650V CoolMOS™ C7 Gold series superjunction MOSFET designed for high-efficiency power factor correction and hard-switching PWM applications. It is packaged in an PG-HSOF-8 surface-mount TOLL package with a 115mm² footprint and features a 4-pin Kelvin source configuration for reduced parasitic source inductance (≈1nH). The device has a maximum on-state resistance of 33mΩ at 25⁰C, a continuous drain current of 77A at Tₖ<150⁰C, and a pulsed drain current of 245A. The TOLL package is MSL1 compliant, fully Pb-free, and enables improved thermal performance with a junction-to-case thermal resistance of 0.32°C/W. The MOSFET is fully qualified according to JEDEC for industrial applications.

Datasheet Summary
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The IPT65R033G7 is a 650V CoolMOS™ C7 Gold series superjunction MOSFET designed for high-efficiency power factor correction and hard-switching PWM applications. It is packaged in an PG-HSOF-8 surface-mount TOLL package with a 115mm² footprint and features a 4-pin Kelvin source configuration for reduced parasitic source inductance (≈1nH). The device has a maximum on-state resistance of 33mΩ at 25⁰C, a continuous drain current of 77A at Tₖ<150⁰C, and a pulsed drain current of 245A. The TOLL package is MSL1 compliant, fully Pb-free, and enables improved thermal performance with a junction-to-case thermal resistance of 0.32°C/W. The MOSFET is fully qualified according to JEDEC for industrial applications.

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500V-950V N-Channel Power MOSFET - IPT65R033G7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPT65R033G7
500V-950V N-Channel Power MOSFET IPT65R033G7
A new SMD package using Kelvin source concept The CoolMOS™ C7 Gold superjunction MOSFET series (G7) for the first time brings together the benefits of the improved 650V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW. Summary of Features CoolMOS™ C7 Gold Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G Enables best-in-class R DS(on) in smallest footprint TOLL package Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS™ C7 enabling faster switching leading to higher efficiency Power density trough BIC 33mΩ in 115mm 2 TOLL footprint Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use TOLL package is easy to use and has the highest quality standards Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible Potential Applications SMPS Telecom Server Solar

A new SMD package using Kelvin source concept

The CoolMOS™ C7 Gold superjunction MOSFET series (G7) for the first time brings together the benefits of the improved 650V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW.


Summary of Features

CoolMOS™ C7 Gold

  • Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G
  • Enables best-in-class R DS(on) in smallest footprint

TOLL package

  • Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1nH)
  • Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
  • Enables improved thermal performance R th

Benefits

  • FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS™ C7 enabling faster switching leading to higher efficiency
  • Power density trough BIC 33mΩ in 115mm 2 TOLL footprint
  • Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use
  • TOLL package is easy to use and has the highest quality standards
  • Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible

Potential Applications

  • SMPS
  • Telecom
  • Server
  • Solar
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT65R033G7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0330 ohms
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