Manufacturer: Infineon Technologies
Win Source Part Number: 091067-IRF5210PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: IRF5210
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 2700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): IXTT50P10;
Introduction Date: January 30, 2004
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
IRF5210 - Automotive HEXFET P-Channel Power MOSFET
P-Channel 100V 40A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET P-CH 100V 40A TO220AB Product overview: IRF5210PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5210PBF can be used for catalog matching and distributor lookup.
MOSFET P-Channel 100V 40A TO220AB
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-220AB;PD 200W;VGS +/-20
MOSFET MOSFT PCh -100V -40A 60mOhm 120nC
MOSFET P-CH 100V 40A TO220AB
MOSFET P-CH 100V 40A TO220AB
P CHANNEL MOSFET, -100V, 40 AMP, TO-220AB, ON RESISTANCE RDS(ON):0.06OHM, TRANSISTOR MOUNTING: THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
100V 40A 60mΩ@10V,24A 200W 4V@250uA P Channel TO-220AB MOSFETs ROHS
P CHANNEL MOSFET, -100V, 40A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 091067-IRF5210PBF | IRF5210PBF | IRF5210PBF-ND | 278-IRF5210PBF | 5411720 | 5411720P | 70016961 | IRF5210PBF | IRF5210PBF | IRF5210PBF | 66776898 | IRF5210PBF | 63J7311 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF5210PBF | Single FETs, MOSFETs | 100V 40A MOSFET Transistor | MOSFETs | MOSFETs | MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-220AB;PD 200W;VGS +/-20 | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Triode/MOS Tube/Transistor >> MOSFETs | P Channel Mosfet, -100V, 40A, To-220Ab; Channel Type Infineon | |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | -100 volts | 100 volts | 100 volts | ||||||||
| PD | 200000 milliwatts | 200 milliwatts | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | ||||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO22 | TO-220; TO-220-3 | Tube | TO-220; To-220ab | TO-220; TO-220 | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 |
