Infineon Technologies AG N-Channel Power MOSFET IRF1018E

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. . Summary of Features Industry standard through-hole power package High-current rating Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement High-current carrying capability package Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications Battery powered applications Power tools DC motor drives Light Electric Vehicles (LEV) SMPS Applications Connected and smart lighting for IoT Energy Storage Systems LED lighting system designs LED strips and signage 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Designers who used this product also designed with IPP045N10N3 G | N-Channel Power MOSFET IRS2186S | Gate driver ICs IRF4905 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRS2186S | Gate driver ICs IRF4905 | P-Channel Power MOSFET IPP045N10N3 G | N-Channel Power MOSFET IRS2186S | Gate driver ICs IRF4905 | P-Channel Power MOSFET