The IRF1018E is a 60V N-channel power MOSFET designed for high-efficiency synchronous rectification, uninterruptible power supplies, and high-speed switching applications. It is available in TO-220AB, D2-Pak, and TO-262 packages. The device has a maximum continuous drain current of 79A at 25°C and 56A at 100°C, with a typical on-resistance of 7.1mΩ at 10V gate voltage. It supports a pulsed drain current of 315A and a peak diode recovery dv/dt of 21V/ns. The single-pulse avalanche energy is rated at 88mJ, and the junction temperature ranges from −55°C to +175°C. Thermal resistance is 1.32°C/W from junction to case and up to 62°C/W from junction to ambient in TO-220 package. Capacitance values include an input capacitance of 2290pF and reverse transfer capacitance of 630pF at specified conditions. The body diode exhibits a forward voltage of 1.3V and reverse recovery charge up to 53nC at 125°C.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .
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60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRF1018E |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0084 ohms |
