The IPU80R900P7 is an 800V CoolMOS™ P7 power MOSFET designed for hard and soft switching flyback topologies in low-power chargers, adapters, LED lighting, and industrial power applications. It is packaged in a PG-TO251-3 case with a continuous drain current of 6 A at TC=25°C and a maximum on-state resistance of 0.90 Ω. The device features a typical gate-source threshold voltage of 3 V with a variation of ±0.5 V, integrated ESD protection up to HBM Class 2, and a single-pulse avalanche energy of 13 mJ. Thermal resistance from junction to case is 2.8 °C/W, and it operates from -55°C to 150°C. It is fully qualified according to JEDEC standards for industrial applications.
A new benchmark in efficiency and thermal performance
800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPU80R900P7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.9000 ohms |
| QG | 15 nC |