Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IQDH45N04LM6SC IQDH45N04LM6SC

OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQDH45N04LM6SC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications. Summary of Features Cutting edge 40 V silicon technology Outstanding FOMs Improved thermal performance Ultra-low parasitics Maximized chip/package ratio Benefits Minimized conduction losses Reduced voltage overshoot Increased maximum current capability Fast switching Less device paralleling required Lowest RDS(on) on a 5x6 footprint Improved thermal performance Easy thermal management Best switching performance Industry-standard package Applications Data center and AI data center solutions Low voltage drives Power conversion Power tools Server power supply units (PSU)