Manufacturer: Infineon Technologies
Win Source Part Number: 1187226-IRF7341PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Family Part Number: IRF7341PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 4.7A
Rds On (Maximum) at Id, Vgs: 50mOhm at 4.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 740pF at 25V
Mosfet Array 2 N-Channel (Dual) 55V 4.7A 2W Surface Mount 8-SO
MOSFET 2N-CH 55V 4.7A 8SO Product overview: IRF7341PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 4.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 4.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7341PBF can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 55V 4.7A 8-SOIC
Pwr MOSFET, 55V Dual N-Ch. HEXFET; SO-8
DISCONTINUED BY MANUFACTURER, MOSFET, 55V, 4.7 AMP, 2W, 8-SOIC, DUAL N CHANNEL, ON RESISTANCE RDS(ON): 0.05OHM, RDS(ON) TEST VOLTAGE VGS: 10V, THRESHOLD VOLTAGE VGS: 1V, SURFACE MOUNT, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
MOSFET 2N-CH 55V 4.7A 8SO
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Allied Electronics, Inc. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | RF Transistors |
| Product Number | 1187226-IRF7341PBF | IRF7341PBF-ND | 289-IRF7341PBF | IRF7341PBF | 70017422 | 17275233 | IRF7341PBF |
| Product Name | FETs - Arrays - IRF7341PBF | FET, MOSFET Arrays | 55V 4.7A MOSFET Transistor | FET, MOSFET Arrays | Pwr MOSFET, 55V Dual N-Ch. HEXFET; SO-8 | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | |||||
| V(BR)DSS | 55 volts | 55 volts | |||||
| QG | 36 nC | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
