The IRF3710S is an N-channel MOSFET in a D2Pak package designed for high-current power switching applications. It has a drain-to-source breakdown voltage of 100 V, a maximum continuous drain current of 57 A at 25°C, and a maximum on-resistance of 23 mΩ at 10 V gate-source voltage. The device supports an operating junction temperature up to 175°C, features a fully avalanche-rated design with 20 mJ repetitive avalanche energy, and has a peak diode recovery dv/dt rating of 5.8 V/ns. Its gate threshold voltage ranges from 2.0 V to 4.0 V, and total gate charge is 130 nC. The D2Pak package enables high power dissipation with a thermal resistance junction-to-case of 0.75 °C/W.
IR MOSFET 100 V in a D²PAK package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Benefits
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRF3710S |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0230 ohms |
