Infineon Technologies AG P-Channel Power MOSFET IRF7240

Description
IR MOSFET -40 V in a SO-8 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. Benefits RoHS Compliant Low RDS(on) Industry-leading quality Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated 175°C Operating Temperature Applications Uninterruptible power supplies (UPS) Designers who used this product also designed with S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM) S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM) S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM)
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Description
IR MOSFET -40 V in a SO-8 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. Benefits RoHS Compliant Low RDS(on) Industry-leading quality Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated 175°C Operating Temperature Applications Uninterruptible power supplies (UPS) Designers who used this product also designed with S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM) S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM) S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM)
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Datasheet
Datasheet Summary
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The IRF7240PbF is a P-channel MOSFET designed for battery and load management applications, housed in an SO-8 surface-mount package with dimensions conforming to JEDEC MS-012AA. It has a drain-source voltage rating of -40 V, continuous drain current of -10.5 A at 25°C and -8.6 A at 70°C, and an on-resistance of 0.015 Ω at VGS = -10 V and 0.025 Ω at VGS = -4.5 V. The device supports a pulsed drain current of -43 A, operates with a junction temperature range of -55°C to +150°C, and features a maximum junction-to-ambient thermal resistance of 50 °C/W. It is lead-free, RoHS compliant, and rated for vapor phase, infrared, or wave soldering. The part is available in tape and reel packaging.

Datasheet Summary
Powered by GS/AI

The IRF7240PbF is a P-channel MOSFET designed for battery and load management applications, housed in an SO-8 surface-mount package with dimensions conforming to JEDEC MS-012AA. It has a drain-source voltage rating of -40 V, continuous drain current of -10.5 A at 25°C and -8.6 A at 70°C, and an on-resistance of 0.015 Ω at VGS = -10 V and 0.025 Ω at VGS = -4.5 V. The device supports a pulsed drain current of -43 A, operates with a junction temperature range of -55°C to +150°C, and features a maximum junction-to-ambient thermal resistance of 50 °C/W. It is lead-free, RoHS compliant, and rated for vapor phase, infrared, or wave soldering. The part is available in tape and reel packaging.

Suppliers

Company
Product
Description
Supplier Links
P-Channel Power MOSFET - IRF7240 - Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
IRF7240
P-Channel Power MOSFET IRF7240
IR MOSFET -40 V in a SO-8 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. Benefits RoHS Compliant Low RDS(on) Industry-leading quality Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated 175°C Operating Temperature Applications Uninterruptible power supplies (UPS) Designers who used this product also designed with S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM) S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM) S29GL256S10TFV013 | High-performance page mode FM25V02A-G | F-RAM (Ferroelectric RAM)

IR MOSFET -40 V in a SO-8 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.


Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature

Applications

  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • S29GL256S10TFV013 |
    High-performance page mode
  • FM25V02A-G |
    F-RAM (Ferroelectric RAM)
  • S29GL256S10TFV013 |
    High-performance page mode
  • FM25V02A-G |
    F-RAM (Ferroelectric RAM)
  • S29GL256S10TFV013 |
    High-performance page mode
  • FM25V02A-G |
    F-RAM (Ferroelectric RAM)
Supplier's Site Datasheet
Electronic Surplus - IRF7240 - 1187182-IRF7240 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRF7240
1187182-IRF7240
Electronic Surplus - IRF7240 1187182-IRF7240
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1187182-IRF7240 Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1187182-IRF7240
Manufacturer Homepage: www.irf.com
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Power MOSFET Power MOSFET
Product Number IRF7240 1187182-IRF7240
Product Name P-Channel Power MOSFET Electronic Surplus - IRF7240
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 0.0150 ohms
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